Skip navigation
HKU Login
Guest Login
Home
Publications
Researchers
Staff
Research Postgraduates
Organizations
Grants
Datasets
Deposit Data
HKUL Research Data Management
Theses
Patents
Community Service
Browsing by Author Joyce, BA
Jump to:
0-9
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
中
or enter first few letters:
Showing results 1 to 20 of 20
Title
Author(s)
Issue Date
Arsenic doping kinetics in silicon during gas source molecular beam epitaxy
Journal:
Surface Science
Xie, MH
Zhang, J
Fernandez, JM
Lees, AK
Joyce, BA
1998
Arsenic incorporation and doping behaviour in silicon and SiGe epitaxial layers grovvn by gas source molecular beam epitaxy
Journal:
Materials Science and Technology
Fernandez, JM
Xie, MH
Matsumura, A
Mokler, SM
Zhang, J
Joyce, BA
1995
Arsenic surface segregation and incorporation in Si and Si1-xGex during gas source molecular beam epitaxy
Journal:
Journal of Crystal Growth
Xie, MH
Lees, AK
Fernandez, JM
Zhang, J
Joyce, BA
1997
Characterization of n-channel Si/SiGe modulation doped structures grown by gas source molecular beam epitaxy
Journal:
Semiconductor Science and Technology
Matsumura, M
Fernandez, JM
Thornton, TJ
Prasad, RS
Holmes, SN
Zhang, XM
Xie, MH
Zhang, J
Joyce, BA
1995
Epitaxial growth mode and silicon/silicon-germanium heterointerfaces
Journal:
Journal of Materials Science: Materials in Electronics
Fernández, JM
Hart, L
Zhang, XM
Xie, MH
Zhang, J
Joyce, BA
1996
Growth and characterization of Si/SiGe microstructures on patterned Si substrates using gas source molecular beam epitaxy
Journal:
Journal of Crystal Growth
Zhang, J
Zhang, XM
Matsumura, A
Marinopoulou, A
Hartung, J
Anwar, N
Parry, G
Xie, MH
Mokler, SM
Fernandez, JM
Joyce, BA
1995
Growth and doping of Si and SiGe films by hydride gas-source molecular beam epitaxy
Journal:
Journal of Crystal Growth
Joyce, BA
Fernández, JM
Xie, MH
Matsumura, A
Zhang, J
Taylor, AG
1996
Growth dynamics studied by RHEED during Si Ge epitaxy from gaseous hydrides
Journal:
Surface Science
Xie, MH
Zhang, J
Mokler, SM
Fernández, J
Joyce, BA
1994
Growth of Si1-xGex heterostructures using gas-source molecular beam epitaxy
Journal:
International Journal of Optoelectronics
Ohtani, N
Mokler, SM
Xie, MH
Zhang, J
Zhang, X
Joyce, BA
1994
Growth rate dependence on GeH4 during gas source MBE of SixGe 1-x alloys grown from Si2H6 and GeH4
Journal:
Journal of Crystal Growth
Mokler, SM
Ohtani, N
Xie, MH
Zhang, X
Joyce, BA
1993
In situ observation of growth rate enhancement during gas source molecular beam epitaxy of Si1-xGex alloys on Si(100) surfaces
Journal:
Applied Physics Letters
Mokler, SM
Ohtani, N
Xie, MH
Zhang, J
Joyce, BA
1992
In situ studies of epitaxial silicon growth by gas source molecular beam epitaxy
Journal:
Advanced Materials for Optics and Electronics
Joyce, BA
Zhang, J
Taylor, AG
Xie, MH
Fernández, JM
Lees, AK
1997
Missing "sheets" in the reciprocal space representation of the disordered surface with one-dimensional domain boundaries
Journal:
Surface Review and Letters
Tok, ES
Zhang, J
Kamiya, I
Xie, MH
Neave, JH
Joyce, BA
2001
New hydrogen desorption kinetics from vicinal Si(0 0 1) surfaces observed by reflectance anisotropy spectroscopy
Journal:
Journal of Crystal Growth
Zhang, J
Lees, AK
Taylor, AG
Xie, MH
Joyce, BA
Sobiesierksi, Z
Westwood, DI
1997
Reflection high-energy electron diffraction intensity oscillations of germanium growth on Si(100) using gas source molecular beam epitaxy
Journal:
Applied Physics Letters
Xie, MH
Zhang, J
Mokler, SM
Fernández, JM
Joyce, BA
1994
RHEED investigation of Ge surface segregation during gas source MBE of Si Si1 - xGex heterostructures
Journal:
Surface Science
Ohtani, N
Mokler, SM
Xie, MH
Zhang, J
Joyce, BA
1993
Silicon/silicon-germanium multiple quantum wells grown by gas-source molecular beam epitaxy: Hydrogen coverage and interfacial abruptness
Journal:
Journal of Crystal Growth
Fernández, JM
Hart, L
Zhang, XM
Xie, MH
Zhang, J
Joyce, BA
1996
Surface segregation during molecular beam epitaxy: The site-blocking effects of surfactant atoms
Journal:
Surface Science
Xie, MH
Zhang, J
Lees, A
Fernandez, JM
Joyce, BA
1996
Transient growth rate change during gas source molecular beam epitaxy of Si1-xGex alloys
Journal:
Applied Physics Letters
Ohtani, N
Mokler, SM
Xie, MH
Zhang, J
Joyce, BA
1993
Two dimensional electron gases in SiGe/Si heterostructures grown by gas source molecular beam epitaxy
Journal:
Journal of Materials Science: Materials in Electronics
Fernández, JM
Matsumura, A
Zhang, XM
Xie, MH
Hart, L
Zhang, J
Joyce, BA
Thornton, TJ
1995