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Title	Author(s)	Issue Date	Views
Arsenic doping kinetics in silicon during gas source molecular beam epitaxy Journal:Surface Science	Xie, MH Zhang, J Fernandez, JM Lees, AK Joyce, BA	1998	47
Arsenic incorporation and doping behaviour in silicon and SiGe epitaxial layers grovvn by gas source molecular beam epitaxy Journal:Materials Science and Technology	Fernandez, JM Xie, MH Matsumura, A Mokler, SM Zhang, J Joyce, BA	1995	30
Arsenic surface segregation and incorporation in Si and Si1-xGex during gas source molecular beam epitaxy Journal:Journal of Crystal Growth	Xie, MH Lees, AK Fernandez, JM Zhang, J Joyce, BA	1997	51
Characterization of n-channel Si/SiGe modulation doped structures grown by gas source molecular beam epitaxy Journal:Semiconductor Science and Technology	Matsumura, M Fernandez, JM Thornton, TJ Prasad, RS Holmes, SN Zhang, XM Xie, MH Zhang, J Joyce, BA	1995	68
Epitaxial growth mode and silicon/silicon-germanium heterointerfaces Journal:Journal of Materials Science: Materials in Electronics	Fernández, JM Hart, L Zhang, XM Xie, MH Zhang, J Joyce, BA	1996	50
Growth and characterization of Si/SiGe microstructures on patterned Si substrates using gas source molecular beam epitaxy Journal:Journal of Crystal Growth	Zhang, J Zhang, XM Matsumura, A Marinopoulou, A Hartung, J Anwar, N Parry, G Xie, MH Mokler, SM Fernandez, JM Joyce, BA	1995	39
Growth and doping of Si and SiGe films by hydride gas-source molecular beam epitaxy Journal:Journal of Crystal Growth	Joyce, BA Fernández, JM Xie, MH Matsumura, A Zhang, J Taylor, AG	1996	41
Growth dynamics studied by RHEED during Si Ge epitaxy from gaseous hydrides Journal:Surface Science	Xie, MH Zhang, J Mokler, SM Fernández, J Joyce, BA	1994	26
Growth of Si1-xGex heterostructures using gas-source molecular beam epitaxy Journal:International Journal of Optoelectronics	Ohtani, N Mokler, SM Xie, MH Zhang, J Zhang, X Joyce, BA	1994
Growth rate dependence on GeH4 during gas source MBE of SixGe 1-x alloys grown from Si2H6 and GeH4 Journal:Journal of Crystal Growth	Mokler, SM Ohtani, N Xie, MH Zhang, X Joyce, BA	1993	46
In situ observation of growth rate enhancement during gas source molecular beam epitaxy of Si1-xGex alloys on Si(100) surfaces Journal:Applied Physics Letters	Mokler, SM Ohtani, N Xie, MH Zhang, J Joyce, BA	1992
In situ studies of epitaxial silicon growth by gas source molecular beam epitaxy Journal:Advanced Materials for Optics and Electronics	Joyce, BA Zhang, J Taylor, AG Xie, MH Fernández, JM Lees, AK	1997
Missing "sheets" in the reciprocal space representation of the disordered surface with one-dimensional domain boundaries Journal:Surface Review and Letters	Tok, ES Zhang, J Kamiya, I Xie, MH Neave, JH Joyce, BA	2001	47
New hydrogen desorption kinetics from vicinal Si(0 0 1) surfaces observed by reflectance anisotropy spectroscopy Journal:Journal of Crystal Growth	Zhang, J Lees, AK Taylor, AG Xie, MH Joyce, BA Sobiesierksi, Z Westwood, DI	1997	42
Reflection high-energy electron diffraction intensity oscillations of germanium growth on Si(100) using gas source molecular beam epitaxy Journal:Applied Physics Letters	Xie, MH Zhang, J Mokler, SM Fernández, JM Joyce, BA	1994	61
RHEED investigation of Ge surface segregation during gas source MBE of Si Si1 - xGex heterostructures Journal:Surface Science	Ohtani, N Mokler, SM Xie, MH Zhang, J Joyce, BA	1993	17
Silicon/silicon-germanium multiple quantum wells grown by gas-source molecular beam epitaxy: Hydrogen coverage and interfacial abruptness Journal:Journal of Crystal Growth	Fernández, JM Hart, L Zhang, XM Xie, MH Zhang, J Joyce, BA	1996	66
Surface segregation during molecular beam epitaxy: The site-blocking effects of surfactant atoms Journal:Surface Science	Xie, MH Zhang, J Lees, A Fernandez, JM Joyce, BA	1996
Transient growth rate change during gas source molecular beam epitaxy of Si1-xGex alloys Journal:Applied Physics Letters	Ohtani, N Mokler, SM Xie, MH Zhang, J Joyce, BA	1993	60
Two dimensional electron gases in SiGe/Si heterostructures grown by gas source molecular beam epitaxy Journal:Journal of Materials Science: Materials in Electronics	Fernández, JM Matsumura, A Zhang, XM Xie, MH Hart, L Zhang, J Joyce, BA Thornton, TJ	1995

Showing results 1 to 20 of 20