Showing results 1 to 4 of 4
Title | Author(s) | Issue Date | |
---|---|---|---|
Dynamic Gate Breakdown of p-Gate GaN HEMTs in Inductive Power Switching Journal:IEEE Electron Device Letters | 2023 | ||
Gate Lifetime of P-Gate GaN HEMT in Inductive Power Switching Proceeding/Conference:Proceedings of the International Symposium on Power Semiconductor Devices and ICs | 2023 | ||
Gate Robustness and Reliability of P-Gate GaN HEMT Evaluated by a Circuit Method Journal:IEEE Transactions on Power Electronics | 2024 | ||
Numerical Simulation and Analytical Modeling of Multichannel AlGaN/GaN Devices Journal:IEEE Transactions on Electron Devices | 2024 |