Browsing by Author CHENG, ZX

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Showing results 1 to 8 of 8
TitleAuthor(s)Issue DateViews
 
Effective passivation of HfO2/Ge interface by using nitrided germanate as passivation interlayer
Journal:physica status solidi (a)
Cheng, ZXXu, JPLiu, LHuang, YLai, PTTang, WM
2017
66
 
Impact of Nitrogen Incorporation on the Interface Between Ge and La2O3 or Y2O3 Gate Dielectric: A Study on the Formation of Germanate
Journal:IEEE Transactions on Electron Devices
Cheng, ZXLiu, LXu, JPHuang, YLai, PTTang, WM
2016
41
 
Improved interfacial and electrical properties of Ge MOS capacitor by using TaON/LaON dual passivation interlayer
Journal:Applied Physics Letters
Cheng, ZXXu, JPLiu, LHuang, YLai, PTTang, WM
2016
63
 
Improved interfacial and electrical properties of Ge MOS capacitor with ZrON/TaON multilayer composite gate dielectric by using fluorinated Si passivation layer
Journal:Applied Physics Letters
HUANG, YXU, JPLIU, LCHENG, ZXLai, PTTANG, WM
2017
26
 
Improved interfacial and electrical properties of HfTiON gate-dielectric Ge MOS capacitor by using LaON/Si dual passivation layer and fluorine-plasma treatment
Journal:Applied Surface Science
Huang, YXu, JPLiu, LCheng, ZXLai, PTTang, WM
2019
18
 
Improvements of Interfacial and Electrical Properties for Ge MOS Capacitor by Using TaYON Interfacial Passivation Layer and Fluorine Incorporation
Journal:IEEE Transactions on Electron Devices
Huang, YXu, JPLiu, LCheng, ZXLai, PTTang, WM
2017
13
 
Interfacial and Electrical Properties of Ge MOS Capacitor by ZrLaON Passivation Layer and Fluorine Incorporation
Proceeding/Conference:IOP Conference Series: Materials Science and Engineering
Huang, YXu, JPLiu, LCheng, ZXLai, PTTang, WM
2017
27
 
Moisture-absorption-free LaTaON as gate dielectric of Ge MOS devices
Journal:Applied Surface Science
LIU, LCHENG, ZXXU, JPHUANG, YLai, PTTANG, WM
2019
32
Showing results 1 to 8 of 8