Showing results 4 to 7 of 7
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| Title | Author(s) | Issue Date | Views | |
|---|---|---|---|---|
Improved I-V characteristics of SiC MOSFETs by TCE thermal gate oxidation Proceeding/Conference:2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC | 2006 | 219 | ||
Influence of TCE concentration in thermal oxidation on reliability of SiC MOS capacitors under Fowler-Nordheim electron injection Journal:Microelectronics Reliability | 2006 | 186 | ||
Kinetics of thermal oxidation of 6H silicon carbide in oxygen plus trichloroethylene Journal:Journal of the Electrochemical Society | 2005 | 136 | ||
Ultra-shallow n +p junction formed by PH 3 and AsH 3 plasma immersion ion implantation Journal:Microelectronics Reliability | 2002 | 64 |