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Showing results 1 to 7 of 7

	Title	Author(s)	Issue Date	Views
	Conduction mechanisms in MOS gate dielectric films Journal:Microelectronics Reliability	Yang, BL Lai, PT Wong, H	2004	197
	Effects of TCE concentration on oxide-charge and interface properties of SiO2 thermally grown on SiC Journal:Solid-State Electronics	Yang, BL Lin, LM Lo, HB Lai, PT	2005	126
	GaN MQW microdisks pivoted on Si substrate Proceeding/Conference:Physica Status Solidi (A) Applications and Materials Science	Choi, HW Yang, BL Lai, PT Chen, P Zhang, XH Teng, JH Chua, SJ	2007	211
	Improved I-V characteristics of SiC MOSFETs by TCE thermal gate oxidation Proceeding/Conference:2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC	Yang, BL Lin, LM Xu, JP Lai, PT	2006	219
	Influence of TCE concentration in thermal oxidation on reliability of SiC MOS capacitors under Fowler-Nordheim electron injection Journal:Microelectronics Reliability	Yang, BL Kwok, PCK Lai, PT	2006	186
	Kinetics of thermal oxidation of 6H silicon carbide in oxygen plus trichloroethylene Journal:Journal of the Electrochemical Society	Yang, BL Lin, LM Lo, HB Lai, PT Chan, CL	2005	198
	Ultra-shallow n +p junction formed by PH 3 and AsH 3 plasma immersion ion implantation Journal:Microelectronics Reliability	Yang, BL Cheung, NW Denholm, S Shao, J Wong, H Lai, PT Cheng, YC	2002	195

Showing results 1 to 7 of 7