Showing results 13 to 19 of 19
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| Title | Author(s) | Issue Date | |
|---|---|---|---|
High linearity nanowire channel GaN HEMTs Proceeding/Conference:Device Research Conference - Conference Digest, DRC | 2013 | ||
High performance InAlN/GaN HEMTs on sic substrate Proceeding/Conference:2010 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2010 | 2010 | ||
Integrated circuits based on bilayer MoS <inf>2</inf> transistors Journal:Nano Letters | 2012 | ||
Large-area 2-D electronics: Materials, technology, and devices Journal:Proceedings of the IEEE | 2013 | ||
Nanowire channel InAlN/GaN HEMTs with high linearity of g<inf>m</inf> and f<inf>T</inf> Journal:IEEE Electron Device Letters | 2013 | ||
| 2013 | |||
Towards ubiquitous RF electronics based on graphene Proceeding/Conference:IEEE MTT-S International Microwave Symposium Digest | 2012 |