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Browsing by Author Ma, ZJ
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Showing results 6 to 15 of 15
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Title
Author(s)
Issue Date
Views
Hot-carrier-induced degradation in reoxidized-nitrided-oxide n-MOSFET's under mixed AC-DC stressing
Journal:
Electron device letters
Ma, ZJ
Lai, PT
Cheng, YC
1992
115
Impact of nitridation/reoxidation on performance degradation in n-MOSFETs under Fowler-Nordheim injection
Journal:
Solid-State Electronics
Ma, ZJ
Liu, ZH
Lai, PT
Fleischer, S
Cheng, YC
1992
159
Improvement of channel-current-induced gate-oxide breakdown in n-MOSFET's using rapid thermal nitridation
Proceeding/Conference:
Proceedings of the 3rd International Conference on Solid State and Integrated Circuit Technology
Huang, MQ
Lai, PT
Ma, ZJ
Cheng, YC
Liu, BY
1992
40
Improvement of punchthrough-induced gate-oxide breakdown in n-channel metal-oxide-semiconductor field-effect transistors using rapid thermal nitridation
Journal:
Applied Physics Letters
Huang, MQ
Lai, PT
Ma, ZJ
Wong, H
Cheng, YC
1992
102
Instability in GIDL current of thermally-nitrided-oxide n-MOSFET's
Proceeding/Conference:
International Conference on VLSI and CAD Proceedings
Ma, ZJ
Lai, PT
Cheng, YC
Huang, MQ
1991
41
Off-state instabilities in thermally nitrided-oxide n-MOSFETs
Journal:
IEEE Transactions on Electron Devices
Ma, ZJ
Lai, PT
Cheng, YC
1993
161
On recovery of hot-carrier-induced mobility degradationin off-state thermally-nitrided-oxide N-MOSFET's
Proceeding/Conference:
Proceedings of the 3rd International Conference on Solid State and Integrated Circuit Technology
Ma, ZJ
Lai, PT
Huang, MQ
Cheng, YC
Liu, BY
1992
39
Oxide-trap-induced instability in GIDL of thermally nitrided-oxide N-MOSFET's under stress
Journal:
Electron device letters
Ma, ZJ
Lai, Pui T
Cheng, YC
1992
122
The Migratory Beekeeping Routing Problem: Model and an Exact Algorithm
Journal:
INFORMS Journal on Computing
Ma, ZJ
Yang, F
Dai, Y
Shen, ZJM
2021
20
Tunneling-injection-induced turnaround behavior of threshold voltage in thermally nitrided oxide n-channel metal-oxide-semiconductor field-effect transistors
Journal:
Journal of Applied Physics
Ma, ZJ
Lai, PT
Liu, ZH
Fleischer, S
Cheng, YC
1990
205
