Showing results 1 to 3 of 3
Title | Author(s) | Issue Date | |
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Exposure of defects in GaN by plasma etching Journal:Applied Physics A: Materials Science and Processing | 2005 | ||
Rutherford backscattering analysis of GaN decomposition Journal:Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | 2003 | ||
Study of the origin of luminescence in high indium composition InGaN/GaN quantum wells Journal:Journal of Applied Physics | 2003 |