Browsing by Subject n-mosfet

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TitleAuthor(s)Issue Date
 
Effect of SiO2/SiC interface on inversion channel electron mobility of 4H-SiC n-MOSFET
Journal:Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors
Xu, JWu, HLai, PTHan, B
2004
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