Showing results 3 to 4 of 4
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Title | Author(s) | Issue Date | |
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NiO Junction Termination Extension for Ga<inf>2</inf>O<inf>3</inf>Devices: High Blocking Field, Low Capacitance, and Fast Switching Speed Proceeding/Conference:Proceedings of the International Symposium on Power Semiconductor Devices and ICs | 2023 | ||
TCAD-Machine learning framework for device variation and operating temperature analysis with experimental demonstration Journal:IEEE Journal of the Electron Devices Society | 2020 |