Showing results 2 to 4 of 4
< previous
Title | Author(s) | Issue Date | |
---|---|---|---|
High-voltage vertical Ga<inf>2</inf>O<inf>3</inf> power rectifiers operational at high temperatures up to 600 K Journal:Applied Physics Letters | 2019 | ||
NiO Junction Termination Extension for Ga<inf>2</inf>O<inf>3</inf>Devices: High Blocking Field, Low Capacitance, and Fast Switching Speed Proceeding/Conference:Proceedings of the International Symposium on Power Semiconductor Devices and ICs | 2023 | ||
TCAD-Machine learning framework for device variation and operating temperature analysis with experimental demonstration Journal:IEEE Journal of the Electron Devices Society | 2020 |