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Conference Paper: A green organic light emitting diode based on a rare-earth Terbium complex

TitleA green organic light emitting diode based on a rare-earth Terbium complex
Authors
KeywordsOLEDs
Rare-earth
Terbium
Issue Date2006
PublisherS P I E - International Society for Optical Engineering. The Journal's web site is located at http://spie.org/x1848.xml
Citation
Proceedings of SPIE, v. 6192, p. 61921P: 1-8 How to Cite?
AbstractTris(8-hydroxyquinoline) aluminum (Alq) has been widely used as the electron transporting layer as well as the green emitter layer in organic light emitting diodes (OLEDs) since it is thermally and morphologically stable to evaporate into thin films. Alq exhibits strong green emission but its spectrum is broad (∼85 nm FWHM) which results in inferior colour purity. On the other hand, rare-earth metal ions exhibit sharp spectral band which corresponds to 5DX-FX transitions. In the case of terbium, this results in a sharp emission in green. In this work, organic light emitting diodes based on a rare-earth metal complex [Tris(3-methyl-1-phenyl-4trimethyl-acetyl-5-pyrazoline) terbium III] were fabricated by thermal evaporation. The basic device structure is indium tin oxide(ITO) / 4,4′-N,N'-dicarbazole-biphenyl (CBP) / 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) / tris(8-hydroxyquinoline) aluminum (Alq) / Lithium Floride(LiF) / Aluminium(Al). The terbium (Tb) complex was doped into the hole transporting material (CBP) and the electron transporting material (Alq) to investigate the effect of dopant in different layers on the device performance. The effects of different dopant concentration on the photoluminescence (PL) and electroluminescence (EL) emission spectra were also investigated. Sharp emission in green (545 nm) was observed for optimum device structure and doping concentration.
Persistent Identifierhttp://hdl.handle.net/10722/97594
ISSN
References

 

DC FieldValueLanguage
dc.contributor.authorNg, AMCen_HK
dc.contributor.authorDjurišić, ABen_HK
dc.contributor.authorCheung, CHen_HK
dc.contributor.authorChan, WKen_HK
dc.date.accessioned2010-09-25T17:14:52Z-
dc.date.available2010-09-25T17:14:52Z-
dc.date.issued2006en_HK
dc.identifier.citationProceedings of SPIE, v. 6192, p. 61921P: 1-8en_HK
dc.identifier.issn0277-786Xen_HK
dc.identifier.urihttp://hdl.handle.net/10722/97594-
dc.description.abstractTris(8-hydroxyquinoline) aluminum (Alq) has been widely used as the electron transporting layer as well as the green emitter layer in organic light emitting diodes (OLEDs) since it is thermally and morphologically stable to evaporate into thin films. Alq exhibits strong green emission but its spectrum is broad (∼85 nm FWHM) which results in inferior colour purity. On the other hand, rare-earth metal ions exhibit sharp spectral band which corresponds to 5DX-FX transitions. In the case of terbium, this results in a sharp emission in green. In this work, organic light emitting diodes based on a rare-earth metal complex [Tris(3-methyl-1-phenyl-4trimethyl-acetyl-5-pyrazoline) terbium III] were fabricated by thermal evaporation. The basic device structure is indium tin oxide(ITO) / 4,4′-N,N'-dicarbazole-biphenyl (CBP) / 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) / tris(8-hydroxyquinoline) aluminum (Alq) / Lithium Floride(LiF) / Aluminium(Al). The terbium (Tb) complex was doped into the hole transporting material (CBP) and the electron transporting material (Alq) to investigate the effect of dopant in different layers on the device performance. The effects of different dopant concentration on the photoluminescence (PL) and electroluminescence (EL) emission spectra were also investigated. Sharp emission in green (545 nm) was observed for optimum device structure and doping concentration.en_HK
dc.languageengen_HK
dc.publisherS P I E - International Society for Optical Engineering. The Journal's web site is located at http://spie.org/x1848.xmlen_HK
dc.relation.ispartofProceedings of SPIE - The International Society for Optical Engineeringen_HK
dc.subjectOLEDsen_HK
dc.subjectRare-earthen_HK
dc.subjectTerbiumen_HK
dc.titleA green organic light emitting diode based on a rare-earth Terbium complexen_HK
dc.typeConference_Paperen_HK
dc.identifier.emailDjurišić, AB: dalek@hku.hken_HK
dc.identifier.authorityDjurišić, AB=rp00690en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1117/12.662299en_HK
dc.identifier.scopuseid_2-s2.0-33746686971en_HK
dc.identifier.hkuros148836en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-33746686971&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume6192en_HK
dc.identifier.spage61921en_HK
dc.identifier.epage8en_HK
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridNg, AMC=12140078600en_HK
dc.identifier.scopusauthoridDjurišić, AB=7004904830en_HK
dc.identifier.scopusauthoridCheung, CH=8618960900en_HK
dc.identifier.scopusauthoridChan, WK=8059126200en_HK

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