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Conference Paper: Enhanced Carrier Mobility for Pentacene TFT by Nitridation of SiO2 Gate Dielectric

TitleEnhanced Carrier Mobility for Pentacene TFT by Nitridation of SiO2 Gate Dielectric
Authors
Kwan, TMTCheng, KHLai, PTChe, CM
Issue Date2006
Citation
Proceedings of RIUPEEEC, p. 41-44 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/97218

 

DC FieldValueLanguage
dc.contributor.authorKwan, TMTen_HK
dc.contributor.authorCheng, KHen_HK
dc.contributor.authorLai, PTen_HK
dc.contributor.authorChe, CMen_HK
dc.date.accessioned2010-09-25T17:00:50Z-
dc.date.available2010-09-25T17:00:50Z-
dc.date.issued2006en_HK
dc.identifier.citationProceedings of RIUPEEEC, p. 41-44en_HK
dc.identifier.urihttp://hdl.handle.net/10722/97218-
dc.languageengen_HK
dc.relation.ispartofProceedings of RIUPEEECen_HK
dc.titleEnhanced Carrier Mobility for Pentacene TFT by Nitridation of SiO2 Gate Dielectricen_HK
dc.typeConference_Paperen_HK
dc.identifier.emailLai, PT: laip@eee.hku.hken_HK
dc.identifier.emailChe, CM: cmche@hku.hken_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.identifier.authorityChe, CM=rp00670en_HK
dc.identifier.hkuros135788en_HK
dc.identifier.spage41en_HK
dc.identifier.epage44en_HK

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