File Download

There are no files associated with this item.

  Links for fulltext
     (May Require Subscription)
Supplementary

Conference Paper: Theoretical absorption spectra of silicon carbide nanocrystals

TitleTheoretical absorption spectra of silicon carbide nanocrystals
Authors
KeywordsNanostructures
Optical properties
Silicon carbide
Surface and interface states
Issue Date2006
PublisherElsevier S.A.. The Journal's web site is located at http://www.elsevier.com/locate/tsf
Citation
The 2005 Spring Meeting of the European Materials Research Society (EMRS 2005). In Thin Solid Films, 2006, v. 495 n. 1-2, p. 404-406 How to Cite?
AbstractIn this article, we report on theoretical absorption spectra of 3C-SiC nanocrystals with different sizes and different surface termination foreign atoms using the semiempirical PM3 localized-density-matrix method. Pronounced size dependence of the absorption spectra is clearly demonstrated. Besides size effect, the influence of the surface configurations on the optical property of SiC nanocrystals is also studied. The absorption spectra of 3C-SiC nanocrystals terminated with OH or NH2 species are calculated. Compared with H-terminated case, the absorption edge of OH-terminated or NH 2-terminated 3C-SiC exhibits a significant red shift. It is also found that there are some fine structures appearing at the lower energy side of the dominant absorption peak (∼ 4.4 eV) for OH-terminated 3C-SiC nanocrystals. © 2005 Elsevier B.V. All rights reserved.
DescriptionThese journal issues entitled: EMRS 2005 Symposium E — Synthesis, Characterization and Applications of Mesostructured Thin Layers
Persistent Identifierhttp://hdl.handle.net/10722/68951
ISSN
2015 Impact Factor: 1.761
2015 SCImago Journal Rankings: 0.726
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorShi, Sen_HK
dc.contributor.authorXu, SJen_HK
dc.contributor.authorWang, Xen_HK
dc.contributor.authorChen, Gen_HK
dc.date.accessioned2010-09-06T06:09:12Z-
dc.date.available2010-09-06T06:09:12Z-
dc.date.issued2006en_HK
dc.identifier.citationThe 2005 Spring Meeting of the European Materials Research Society (EMRS 2005). In Thin Solid Films, 2006, v. 495 n. 1-2, p. 404-406en_HK
dc.identifier.issn0040-6090en_HK
dc.identifier.urihttp://hdl.handle.net/10722/68951-
dc.descriptionThese journal issues entitled: EMRS 2005 Symposium E — Synthesis, Characterization and Applications of Mesostructured Thin Layers-
dc.description.abstractIn this article, we report on theoretical absorption spectra of 3C-SiC nanocrystals with different sizes and different surface termination foreign atoms using the semiempirical PM3 localized-density-matrix method. Pronounced size dependence of the absorption spectra is clearly demonstrated. Besides size effect, the influence of the surface configurations on the optical property of SiC nanocrystals is also studied. The absorption spectra of 3C-SiC nanocrystals terminated with OH or NH2 species are calculated. Compared with H-terminated case, the absorption edge of OH-terminated or NH 2-terminated 3C-SiC exhibits a significant red shift. It is also found that there are some fine structures appearing at the lower energy side of the dominant absorption peak (∼ 4.4 eV) for OH-terminated 3C-SiC nanocrystals. © 2005 Elsevier B.V. All rights reserved.en_HK
dc.languageengen_HK
dc.publisherElsevier S.A.. The Journal's web site is located at http://www.elsevier.com/locate/tsfen_HK
dc.relation.ispartofThin Solid Filmsen_HK
dc.relation.ispartofThin Solid Films-
dc.subjectNanostructuresen_HK
dc.subjectOptical propertiesen_HK
dc.subjectSilicon carbideen_HK
dc.subjectSurface and interface statesen_HK
dc.titleTheoretical absorption spectra of silicon carbide nanocrystalsen_HK
dc.typeConference_Paperen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0040-6090&volume=495&spage=404&epage=406&date=2006&atitle=Theoretical+absorption+spectra+of+silicon+carbide+nanocrystalsen_HK
dc.identifier.emailXu, SJ: sjxu@hku.hken_HK
dc.identifier.emailWang, X: xwang@hkucc.hku.hken_HK
dc.identifier.emailChen, G: ghchen@hku.hk-
dc.identifier.authorityXu, SJ=rp00821en_HK
dc.identifier.authorityChen, G=rp00671en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1016/j.tsf.2005.08.222en_HK
dc.identifier.scopuseid_2-s2.0-28144460647en_HK
dc.identifier.hkuros112588en_HK
dc.identifier.hkuros149470-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-28144460647&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume495en_HK
dc.identifier.issue1-2en_HK
dc.identifier.spage404en_HK
dc.identifier.epage406en_HK
dc.identifier.isiWOS:000233983900075-
dc.publisher.placeSwitzerlanden_HK
dc.identifier.scopusauthoridShi, SL=9532439000en_HK
dc.identifier.scopusauthoridXu, SJ=7404439005en_HK
dc.identifier.scopusauthoridWang, XJ=10341267000en_HK
dc.identifier.scopusauthoridChen, GH=35253368600en_HK
dc.customcontrol.immutablesml 151012 - merged-

Export via OAI-PMH Interface in XML Formats


OR


Export to Other Non-XML Formats