published patent: Semiconductor Color-Tunable Broadband Light Sources And Full-Color Microdisplays

TitleSemiconductor Color-Tunable Broadband Light Sources And Full-Color Microdisplays
Priority Date2009-10-02 US 12/572345
2008-10-03 US 12/102760P
Inventors
Issue Date2010
Citation
US Published patent application 20100084668. Washington, DC: US Patent and Trademark Office (USPTO), 2010 How to Cite?
AbstractMethods And Systems Are Provided That May Be Used To Utilize And Manufacture A Light Sources Apparatus. A First Light Emitting Diode Emits Light Having A First Wavelength, And A Second Light Emitting Diode For Emitting Light Having A Second Wavelength. Each Of The First And Second Light Emitting Diodes May Comprise Angled Facets To Reflect Incident Light In A Direct Toward A Top End Of The First Light Emitting Diode. The Second Light Emitting Diode Comprising Angled Facets May Reflect Incident Light In A Direction Toward A Top End Of The Second Light Emitting Diode. A First Distributed Bragg Reflector Is Disposed Between The Top End Of The First Light Emitting Diode And A Bottom End Of The Second Light Emitting Diode To Allow Light From The First Light Emitting Diode To Pass Through And To Reflect Light From The Second Light Emitting Diode.
Persistent Identifierhttp://hdl.handle.net/10722/62156

 

DC FieldValueLanguage
dc.date.accessioned2010-07-13T03:55:02Z-
dc.date.available2010-07-13T03:55:02Z-
dc.date.issued2010-
dc.identifier.citationUS Published patent application 20100084668. Washington, DC: US Patent and Trademark Office (USPTO), 2010en_HK
dc.identifier.urihttp://hdl.handle.net/10722/62156-
dc.description.abstractMethods And Systems Are Provided That May Be Used To Utilize And Manufacture A Light Sources Apparatus. A First Light Emitting Diode Emits Light Having A First Wavelength, And A Second Light Emitting Diode For Emitting Light Having A Second Wavelength. Each Of The First And Second Light Emitting Diodes May Comprise Angled Facets To Reflect Incident Light In A Direct Toward A Top End Of The First Light Emitting Diode. The Second Light Emitting Diode Comprising Angled Facets May Reflect Incident Light In A Direction Toward A Top End Of The Second Light Emitting Diode. A First Distributed Bragg Reflector Is Disposed Between The Top End Of The First Light Emitting Diode And A Bottom End Of The Second Light Emitting Diode To Allow Light From The First Light Emitting Diode To Pass Through And To Reflect Light From The Second Light Emitting Diode.en_HK
dc.languageengen_HK
dc.relation.isreferencedbyUS 2008211386 (A1) 2008-09-04en_HK
dc.relation.isreferencedbyUS 7906892 (B2) 2011-03-15en_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License For Public Patent Documents-
dc.titleSemiconductor Color-Tunable Broadband Light Sources And Full-Color Microdisplaysen_HK
dc.typePatenten_HK
dc.description.naturepublished_or_final_version-
dc.identifier.hkuros163478en_HK
dc.contributor.inventorWang, Xen_HK
patents.identifier.applicationUS 12/572345en_HK
patents.description.assigneeVersitech Limiteden_HK
patents.description.countryUnited States of Americaen_HK
patents.date.publication2010-04-08en_HK
patents.date.application2009-10-02en_HK
patents.date.priority2009-10-02 US 12/572345en_HK
patents.date.priority2008-10-03 US 12/102760Pen_HK
patents.description.ccUSen_HK
patents.identifier.publicationUS 20100084668en_HK
patents.relation.familyCN 102171847 (A) 2011-08-31en_HK
patents.relation.familyDE 112009002311 (T5) 2012-01-19en_HK
patents.relation.familyJP 2012504856 (A) 2012-02-23en_HK
patents.relation.familyKR 20110082162 (A) 2011-07-18en_HK
patents.relation.familyTW 201017863 (A) 2010-05-01en_HK
patents.relation.familyUS 2010084668 (A1) 2010-04-08en_HK
patents.relation.familyUS 7982228 (B2) 2011-07-19en_HK
patents.relation.familyWO 2010037274 (A1) 2010-04-08en_HK
patents.description.kindA1en_HK
patents.typePatent_publisheden_HK

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