published patent: SEMICONDUCTOR COLOR-TUNABLE BROADBAND LIGHT SOURCES AND FULL-COLOR MICRODISPLAYS

TitleSEMICONDUCTOR COLOR-TUNABLE BROADBAND LIGHT SOURCES AND FULL-COLOR MICRODISPLAYS
Priority Date2008-10-03 US 12/102760P
2009-09-30 PCT/CN2009001113
Inventors
Issue Date30-Nov-2012
Citation
Germany Published Patent Application DE 112009002311. Munich, Germany: The German Patent and Trade Mark Office (DPMA), 2012 How to Cite?
AbstractMethods and systems are provided that may be used to utilize and manufacture a light sources apparatus. A first light emitting diode emits light having a first wavelength, and a second light emitting diode for emitting light having a second wavelength. Each of the first and second light emitting diodes may comprise angled facets to reflect incident light in a direct toward a top end of the first light emitting diode. The second light emitting diode comprising angled facets may reflect incident light in a direction toward a top end of the second light emitting diode. A first distributed Bragg reflector is disposed between the top end of the first light emitting diode and a bottom end of the second light emitting diode to allow light from the first light emitting diode to pass through and to reflect light from the second light emitting diode.
Persistent Identifierhttp://hdl.handle.net/10722/176704

 

DC FieldValueLanguage
dc.date.accessioned2012-11-30T08:38:22Z-
dc.date.available2012-11-30T08:38:22Z-
dc.date.issued2012-11-30-
dc.identifier.citationGermany Published Patent Application DE 112009002311. Munich, Germany: The German Patent and Trade Mark Office (DPMA), 2012en_HK
dc.identifier.urihttp://hdl.handle.net/10722/176704-
dc.description.abstractMethods and systems are provided that may be used to utilize and manufacture a light sources apparatus. A first light emitting diode emits light having a first wavelength, and a second light emitting diode for emitting light having a second wavelength. Each of the first and second light emitting diodes may comprise angled facets to reflect incident light in a direct toward a top end of the first light emitting diode. The second light emitting diode comprising angled facets may reflect incident light in a direction toward a top end of the second light emitting diode. A first distributed Bragg reflector is disposed between the top end of the first light emitting diode and a bottom end of the second light emitting diode to allow light from the first light emitting diode to pass through and to reflect light from the second light emitting diode.en_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License For Public Patent Documentsen_US
dc.titleSEMICONDUCTOR COLOR-TUNABLE BROADBAND LIGHT SOURCES AND FULL-COLOR MICRODISPLAYSen_HK
dc.typePatenten_US
dc.description.naturepublished_or_final_versionen_US
dc.contributor.inventorWang, Xianghuaen_HK
dc.contributor.inventorHui, Kun Namen_HK
dc.contributor.inventorChoi, HWen_HK
patents.identifier.applicationDE 200911002311Ten_HK
patents.description.assigneeVERSITECH LTD [CN] en_HK
patents.description.countryGermany en_HK
patents.date.publication2012-01-19en_HK
patents.date.application2009-09-30en_HK
patents.date.priority2008-10-03 US 12/102760Pen_HK
patents.date.priority2009-09-30 PCT/CN2009001113en_HK
patents.description.ccDEen_HK
patents.identifier.publicationDE 112009002311en_HK
patents.relation.familyCN 102171847 (A) 2011-08-31en_HK
patents.relation.familyDE 112009002311 (T5) 2012-01-19en_HK
patents.relation.familyJP 2012504856 (A) 2012-02-23en_HK
patents.relation.familyKR 20110082162 (A) 2011-07-18en_HK
patents.relation.familyTW 201017863 (A) 2010-05-01en_HK
patents.relation.familyUS 2010084668 (A1) 2010-04-08 en_HK
patents.relation.familyUS 7982228 (B2) 2011-07-19en_HK
patents.relation.familyWO 2010037274 (A1) 2010-04-08en_HK
patents.description.kindT5en_HK
patents.typePatent_publisheden_HK

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