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Conference Paper: ZnO nanorod heterojunctions and LEDs
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TitleZnO nanorod heterojunctions and LEDs
 
AuthorsDjurišić, AB1
Hsu, YF1
Xi, YY1
Ng, AMC1
Tam, KH1
Chan, WK1
 
Issue Date2008
 
PublisherIEEE.
 
Citation, p. 182-185 [How to Cite?]
DOI: http://dx.doi.org/10.1109/INEC.2008.4585464
 
AbstractZinc oxide (ZnO) nanorods are of great interest due to their potential use in optoelectronic devices. Hydrothermal synthesis and electrodeposition are two very promising techniques for ZnO growth as they are simple and inexpensive and also involve low fabrication temperature, favoring the use of large area and/or flexible substrates. In this work, we investigated the influence of the seed layer on the morphology and optical properties of ZnO nanorods, as well as the influence of post-fabrication treatments, such as annealing under different conditions. To further demonstrate the potential use of ZnO nanorods in optoelectronic devices, light emitting diodes (LEDs) were also studied in this paper. We have focused on heterojunction devices with ZnO as an n-type layer, since heterojunction ZnO LEDs typically exhibit better performance compared to homojunctions. We have investigated devices using GaN and NiO as a p-type material, and in addition hybrid organic/inorganic devices were also prepared. © 2008 IEEE.
 
Description2nd IEEE International Nanoelectronics Conference, Shanghai, China, March 24-27, 2008
 
DOIhttp://dx.doi.org/10.1109/INEC.2008.4585464
 
ReferencesReferences in Scopus
 
DC FieldValue
dc.contributor.authorDjurišić, AB
 
dc.contributor.authorHsu, YF
 
dc.contributor.authorXi, YY
 
dc.contributor.authorNg, AMC
 
dc.contributor.authorTam, KH
 
dc.contributor.authorChan, WK
 
dc.date.accessioned2010-07-13T03:44:12Z
 
dc.date.available2010-07-13T03:44:12Z
 
dc.date.issued2008
 
dc.description.abstractZinc oxide (ZnO) nanorods are of great interest due to their potential use in optoelectronic devices. Hydrothermal synthesis and electrodeposition are two very promising techniques for ZnO growth as they are simple and inexpensive and also involve low fabrication temperature, favoring the use of large area and/or flexible substrates. In this work, we investigated the influence of the seed layer on the morphology and optical properties of ZnO nanorods, as well as the influence of post-fabrication treatments, such as annealing under different conditions. To further demonstrate the potential use of ZnO nanorods in optoelectronic devices, light emitting diodes (LEDs) were also studied in this paper. We have focused on heterojunction devices with ZnO as an n-type layer, since heterojunction ZnO LEDs typically exhibit better performance compared to homojunctions. We have investigated devices using GaN and NiO as a p-type material, and in addition hybrid organic/inorganic devices were also prepared. © 2008 IEEE.
 
dc.description.natureLink_to_subscribed_fulltext
 
dc.description2nd IEEE International Nanoelectronics Conference, Shanghai, China, March 24-27, 2008
 
dc.identifier.citation, p. 182-185 [How to Cite?]
DOI: http://dx.doi.org/10.1109/INEC.2008.4585464
 
dc.identifier.doihttp://dx.doi.org/10.1109/INEC.2008.4585464
 
dc.identifier.epage185
 
dc.identifier.hkuros153984
 
dc.identifier.scopuseid_2-s2.0-52649180641
 
dc.identifier.spage182
 
dc.identifier.urihttp://hdl.handle.net/10722/61642
 
dc.languageeng
 
dc.publisherIEEE.
 
dc.relation.ispartof2008 2nd IEEE International Nanoelectronics Conference, INEC 2008
 
dc.relation.referencesReferences in Scopus
 
dc.rights©2008 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
 
dc.titleZnO nanorod heterojunctions and LEDs
 
dc.typeConference_Paper
 
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Author Affiliations
  1. The University of Hong Kong