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Conference Paper: ZnO nanorod heterojunctions and LEDs

TitleZnO nanorod heterojunctions and LEDs
Authors
Issue Date2008
PublisherIEEE.
Citation
, p. 182-185 How to Cite?
AbstractZinc oxide (ZnO) nanorods are of great interest due to their potential use in optoelectronic devices. Hydrothermal synthesis and electrodeposition are two very promising techniques for ZnO growth as they are simple and inexpensive and also involve low fabrication temperature, favoring the use of large area and/or flexible substrates. In this work, we investigated the influence of the seed layer on the morphology and optical properties of ZnO nanorods, as well as the influence of post-fabrication treatments, such as annealing under different conditions. To further demonstrate the potential use of ZnO nanorods in optoelectronic devices, light emitting diodes (LEDs) were also studied in this paper. We have focused on heterojunction devices with ZnO as an n-type layer, since heterojunction ZnO LEDs typically exhibit better performance compared to homojunctions. We have investigated devices using GaN and NiO as a p-type material, and in addition hybrid organic/inorganic devices were also prepared. © 2008 IEEE.
Description2nd IEEE International Nanoelectronics Conference, Shanghai, China, March 24-27, 2008
Persistent Identifierhttp://hdl.handle.net/10722/61642
References

 

DC FieldValueLanguage
dc.contributor.authorDjurišić, ABen_HK
dc.contributor.authorHsu, YFen_HK
dc.contributor.authorXi, YYen_HK
dc.contributor.authorNg, AMCen_HK
dc.contributor.authorTam, KHen_HK
dc.contributor.authorChan, WKen_HK
dc.date.accessioned2010-07-13T03:44:12Z-
dc.date.available2010-07-13T03:44:12Z-
dc.date.issued2008en_HK
dc.identifier.citation, p. 182-185en_HK
dc.identifier.urihttp://hdl.handle.net/10722/61642-
dc.description2nd IEEE International Nanoelectronics Conference, Shanghai, China, March 24-27, 2008en_HK
dc.description.abstractZinc oxide (ZnO) nanorods are of great interest due to their potential use in optoelectronic devices. Hydrothermal synthesis and electrodeposition are two very promising techniques for ZnO growth as they are simple and inexpensive and also involve low fabrication temperature, favoring the use of large area and/or flexible substrates. In this work, we investigated the influence of the seed layer on the morphology and optical properties of ZnO nanorods, as well as the influence of post-fabrication treatments, such as annealing under different conditions. To further demonstrate the potential use of ZnO nanorods in optoelectronic devices, light emitting diodes (LEDs) were also studied in this paper. We have focused on heterojunction devices with ZnO as an n-type layer, since heterojunction ZnO LEDs typically exhibit better performance compared to homojunctions. We have investigated devices using GaN and NiO as a p-type material, and in addition hybrid organic/inorganic devices were also prepared. © 2008 IEEE.en_HK
dc.languageengen_HK
dc.publisherIEEE.en_HK
dc.relation.ispartof2008 2nd IEEE International Nanoelectronics Conference, INEC 2008en_HK
dc.rights©2008 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.en_HK
dc.titleZnO nanorod heterojunctions and LEDsen_HK
dc.typeConference_Paperen_HK
dc.identifier.emailDjurišić, AB: dalek@hku.hken_HK
dc.identifier.emailChan, WK: waichan@hku.hken_HK
dc.identifier.authorityDjurišić, AB=rp00690en_HK
dc.identifier.authorityChan, WK=rp00667en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1109/INEC.2008.4585464en_HK
dc.identifier.scopuseid_2-s2.0-52649180641en_HK
dc.identifier.hkuros153984en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-52649180641&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.spage182en_HK
dc.identifier.epage185en_HK
dc.identifier.scopusauthoridDjurišić, AB=7004904830en_HK
dc.identifier.scopusauthoridHsu, YF=16063930300en_HK
dc.identifier.scopusauthoridXi, YY=23053521800en_HK
dc.identifier.scopusauthoridNg, AMC=12140078600en_HK
dc.identifier.scopusauthoridTam, KH=8533246200en_HK
dc.identifier.scopusauthoridChan, WK=13310083000en_HK

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