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Conference Paper: Optimum mask and source patterns to print a given shape

TitleOptimum mask and source patterns to print a given shape
Authors
KeywordsOff-axis illumination
source optimization
RET
OPC
global optimization
Issue Date2001
PublisherS P I E - International Society for Optical Engineering. The Journal's web site is located at http://www.spie.org/app/Publications/index.cfm?fuseaction=proceedings
Citation
S P I E Conference on Optical microlithography XIV, Santa Clara, USA, 27 February - 2 March 2001, v. 4346, p. 486-502 How to Cite?
AbstractNew degrees of freedom can be optimized in mask shapes when the source is also adjustable, because required image symmetries can be provided by the source rather than the collected wavefront. The optimized mask will often consist of novel sets of shapes that are quite different in layout from the target IC patterns. This implies that the optimization algorithm should have good global convergence properties, since the target patterns may not be a suitable starting solution. We have eveloped an algorithm that can optimize mask and source without using a starting design. Examples are shown where the process window obtained is between 2 and 6 times larger than that achieved with standard RET methods. The optimized masks require phase shift, but no trim mask is used. Thus far we have only optimized 2D patterns over small fields (periodicities of 1im or less). We also discuss mask optimization with fixed source, source optimization with fixed mask, and the re-targeting of designs in different mask regions to provide a common exposure level.
DescriptionProceedings of S P I E - the International Society for Optical
Persistent Identifierhttp://hdl.handle.net/10722/54040
ISSN

 

DC FieldValueLanguage
dc.contributor.authorRosenbluth, AEen_HK
dc.contributor.authorBukofsky, SJen_HK
dc.contributor.authorHibbs, MSen_HK
dc.contributor.authorLai, Ken_HK
dc.contributor.authorMolless, AFen_HK
dc.contributor.authorSingh, RNen_HK
dc.contributor.authorWong, AKKen_HK
dc.date.accessioned2009-04-03T07:35:12Z-
dc.date.available2009-04-03T07:35:12Z-
dc.date.issued2001en_HK
dc.identifier.citationS P I E Conference on Optical microlithography XIV, Santa Clara, USA, 27 February - 2 March 2001, v. 4346, p. 486-502en_HK
dc.identifier.issn0277-786Xen_HK
dc.identifier.urihttp://hdl.handle.net/10722/54040-
dc.descriptionProceedings of S P I E - the International Society for Opticalen_HK
dc.description.abstractNew degrees of freedom can be optimized in mask shapes when the source is also adjustable, because required image symmetries can be provided by the source rather than the collected wavefront. The optimized mask will often consist of novel sets of shapes that are quite different in layout from the target IC patterns. This implies that the optimization algorithm should have good global convergence properties, since the target patterns may not be a suitable starting solution. We have eveloped an algorithm that can optimize mask and source without using a starting design. Examples are shown where the process window obtained is between 2 and 6 times larger than that achieved with standard RET methods. The optimized masks require phase shift, but no trim mask is used. Thus far we have only optimized 2D patterns over small fields (periodicities of 1im or less). We also discuss mask optimization with fixed source, source optimization with fixed mask, and the re-targeting of designs in different mask regions to provide a common exposure level.en_HK
dc.languageengen_HK
dc.publisherS P I E - International Society for Optical Engineering. The Journal's web site is located at http://www.spie.org/app/Publications/index.cfm?fuseaction=proceedingsen_HK
dc.rightsS P I E - the International Society for Optical Proceedings. Copyright © S P I E - International Society for Optical Engineering.en_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rightsCopyright 2001 Society of Photo-Optical Instrumentation Engineers.This paper was published in Optical microlithography XIV, Santa Clara, USA, 27 February - 2 March 2001, v. 4346, p. 486-502 and is made available as an electronic reprint with permission of SPIE. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations viaelectronic or other means, duplication of any material in this paper for a fee or for commercial purposes,or modification of the content of the paper are prohibited.en_HK
dc.subjectOff-axis illuminationen_HK
dc.subjectsource optimizationen_HK
dc.subjectRETen_HK
dc.subjectOPCen_HK
dc.subjectglobal optimizationen_HK
dc.titleOptimum mask and source patterns to print a given shapeen_HK
dc.typeConference_Paperen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0277-786X&volume=4346&spage=486&epage=502&date=2001&atitle=Optimum+mask+and+source+patterns+to+print+a+given+shapeen_HK
dc.identifier.emailWong, AKK: awong@eee.hku.hken_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1117/12.435748en_HK
dc.identifier.scopuseid_2-s2.0-0035758402-
dc.identifier.hkuros58694-

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