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Conference Paper: Two-photon excited photoluminescence in InGaN multi-quantum-wells structures

TitleTwo-photon excited photoluminescence in InGaN multi-quantum-wells structures
Authors
Issue Date2004
PublisherIEEE.
Citation
The 2004 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 04), The University of Queensland, Brisbane, Australia, 8-10 December 2004. In Conference Proceedings, 2004, p. 153-155 How to Cite?
AbstractIn this work, we report on the two-photon absorption induced luminescence of InGaN multiple quantum wells grown on sapphire. When the sample was excited by femtosecond near-infrared laser pulses at room temperature, an intense luminescence signal peaked at ∼415 nm from the sample was observed, which indicates strong nonlinear optical effect in InGaN quantum well structures. The interferometric autocorrelated luminescence traces were recorded to verify the second order nonlinearity of the luminescence. In addition, the strong second harmonic generation signal of the excitation laser was also observed. The mechanism of the two-photon excited photoluminescence in InGaN quantum wells was discussed.
Persistent Identifierhttp://hdl.handle.net/10722/54004
ISSN
References

 

DC FieldValueLanguage
dc.contributor.authorLi, Qen_HK
dc.contributor.authorXu, SJen_HK
dc.contributor.authorDai, DCen_HK
dc.contributor.authorChe, CMen_HK
dc.date.accessioned2009-04-03T07:34:12Z-
dc.date.available2009-04-03T07:34:12Z-
dc.date.issued2004en_HK
dc.identifier.citationThe 2004 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 04), The University of Queensland, Brisbane, Australia, 8-10 December 2004. In Conference Proceedings, 2004, p. 153-155en_HK
dc.identifier.issn1097-2137en_HK
dc.identifier.urihttp://hdl.handle.net/10722/54004-
dc.description.abstractIn this work, we report on the two-photon absorption induced luminescence of InGaN multiple quantum wells grown on sapphire. When the sample was excited by femtosecond near-infrared laser pulses at room temperature, an intense luminescence signal peaked at ∼415 nm from the sample was observed, which indicates strong nonlinear optical effect in InGaN quantum well structures. The interferometric autocorrelated luminescence traces were recorded to verify the second order nonlinearity of the luminescence. In addition, the strong second harmonic generation signal of the excitation laser was also observed. The mechanism of the two-photon excited photoluminescence in InGaN quantum wells was discussed.-
dc.languageengen_HK
dc.publisherIEEE.en_HK
dc.relation.ispartofConference on Optoelectronic and Microelectronic Materials and Devices-
dc.rights©2004 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.-
dc.titleTwo-photon excited photoluminescence in InGaN multi-quantum-wells structuresen_HK
dc.typeConference_Paperen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=1097-2137&volume=&spage=153&epage=155&date=2004&atitle=Two-photon+excited+photoluminescence+in+InGaN+multi-quantum-wells+structuresen_HK
dc.identifier.emailXu, SJ: sjxu@hkucc.hku.hken_HK
dc.identifier.emailChe, CM: cmche@hku.hken_HK
dc.identifier.authorityXu, SJ=rp00821-
dc.identifier.authorityChe, CM=rp00670-
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1109/COMMAD.2004.1577515-
dc.identifier.scopuseid_2-s2.0-46149098358-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-46149098358&selection=ref&src=s&origin=recordpage-
dc.identifier.spage153-
dc.identifier.epage155-
dc.identifier.scopusauthoridLi, Q=7405861869-
dc.identifier.scopusauthoridXu, SJ=7404439005-
dc.identifier.scopusauthoridDai, DC=7102762189-
dc.identifier.scopusauthoridChe, CM=7102442791-
dc.identifier.issnl1097-2137-

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