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Article: Kinetics of thermal oxidation of 6H silicon carbide in oxygen plus trichloroethylene

TitleKinetics of thermal oxidation of 6H silicon carbide in oxygen plus trichloroethylene
Authors
KeywordsChemistry
Electrochemistry
Issue Date2005
PublisherElectrochemical Society, Inc. The Journal's web site is located at http://ojps.aip.org/JES
Citation
Journal Of The Electrochemical Society, 2005, v. 152 n. 6, p. G441-G444 How to Cite?
AbstractIn this work, the behaviors of the trichloroethylene (TCE) thermal oxidation of 6H silicon carbide (SiC) are investigated. The oxide growth of 6H SiC under different TCE concentrations (ratios of TCE to O2) follows the linear-parabolic oxidation law derived for silicon oxidation by Deal and Grove, J. Appl. Phys., 36 (1965). The oxidation rate with TCE is much higher than that without TCE and strongly depends on the TCE ratio in addition to oxidation temperature and oxidation time. The increase in oxidation rate induced by TCE is between 2.7 and 67% for a TCE ratio of 0.001-0.2 and a temperature of 1000-1150°C. Generally, the oxidation rate increases quickly with the TCE ratio for a TCE ratio less than 0.05 and then gradually saturates for a ratio larger than 0.05. The activation energy EB/A of the TCE oxidation for the TCE ratio range of 0.001-0.2 is 1.04-1.05 eV, which is a little larger than the 1.02 eV of dry oxidation. A two-step model for the TCE oxidation is also proposed to explain the experimental results. The model points out that in the SiC oxidation with TCE, the products (H2O and Cl2) of the reaction between TCE and O2 can speed up the oxidation, and hence, the oxidation rate is highly sensitive to the TCE ratio. © 2005 The Electrochemical Society. All rights reserved.
Persistent Identifierhttp://hdl.handle.net/10722/48386
ISSN
2015 Impact Factor: 3.014
2015 SCImago Journal Rankings: 1.157
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorYang, BLen_HK
dc.contributor.authorLin, LMen_HK
dc.contributor.authorLo, HBen_HK
dc.contributor.authorLai, PTen_HK
dc.contributor.authorChan, CLen_HK
dc.date.accessioned2008-05-22T04:11:14Z-
dc.date.available2008-05-22T04:11:14Z-
dc.date.issued2005en_HK
dc.identifier.citationJournal Of The Electrochemical Society, 2005, v. 152 n. 6, p. G441-G444en_HK
dc.identifier.issn0013-4651en_HK
dc.identifier.urihttp://hdl.handle.net/10722/48386-
dc.description.abstractIn this work, the behaviors of the trichloroethylene (TCE) thermal oxidation of 6H silicon carbide (SiC) are investigated. The oxide growth of 6H SiC under different TCE concentrations (ratios of TCE to O2) follows the linear-parabolic oxidation law derived for silicon oxidation by Deal and Grove, J. Appl. Phys., 36 (1965). The oxidation rate with TCE is much higher than that without TCE and strongly depends on the TCE ratio in addition to oxidation temperature and oxidation time. The increase in oxidation rate induced by TCE is between 2.7 and 67% for a TCE ratio of 0.001-0.2 and a temperature of 1000-1150°C. Generally, the oxidation rate increases quickly with the TCE ratio for a TCE ratio less than 0.05 and then gradually saturates for a ratio larger than 0.05. The activation energy EB/A of the TCE oxidation for the TCE ratio range of 0.001-0.2 is 1.04-1.05 eV, which is a little larger than the 1.02 eV of dry oxidation. A two-step model for the TCE oxidation is also proposed to explain the experimental results. The model points out that in the SiC oxidation with TCE, the products (H2O and Cl2) of the reaction between TCE and O2 can speed up the oxidation, and hence, the oxidation rate is highly sensitive to the TCE ratio. © 2005 The Electrochemical Society. All rights reserved.en_HK
dc.format.extent339161 bytes-
dc.format.extent27648 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.languageengen_HK
dc.publisherElectrochemical Society, Inc. The Journal's web site is located at http://ojps.aip.org/JESen_HK
dc.relation.ispartofJournal of the Electrochemical Societyen_HK
dc.rightsJournal of Electrochemical Society. Copyright © Electrochemical Society, Inc.en_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rightsReproduced with permission from Journal of Electrochemical Society, 2005, v. 152 n. 6, p. G441-G444. Copyright 2005, The Electrochemical Society. Permission is not needed if figures and/or tables from one ECS publication will be reused in another forthcoming ECS publicationen_HK
dc.subjectChemistryen_HK
dc.subjectElectrochemistryen_HK
dc.titleKinetics of thermal oxidation of 6H silicon carbide in oxygen plus trichloroethyleneen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0013-4651&volume=152&issue=6&spage=G441&epage=G444&date=2005&atitle=Kinetics+of+thermal+oxidation+of+6H+silicon+carbide+in+oxygen+plus+trichloroethyleneen_HK
dc.identifier.emailLai, PT:laip@eee.hku.hken_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1149/1.1899284en_HK
dc.identifier.scopuseid_2-s2.0-22544459358en_HK
dc.identifier.hkuros102521-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-22544459358&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume152en_HK
dc.identifier.issue6en_HK
dc.identifier.spageG441en_HK
dc.identifier.epageG444en_HK
dc.identifier.isiWOS:000229475300071-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridYang, BL=24777588400en_HK
dc.identifier.scopusauthoridLin, LM=8642604900en_HK
dc.identifier.scopusauthoridLo, HB=7202085394en_HK
dc.identifier.scopusauthoridLai, PT=7202946460en_HK
dc.identifier.scopusauthoridChan, CL=8507083700en_HK

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