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Conference Paper: Stark shift and field induced tunneling in doped quantum wells with arbitrary potential profiles

TitleStark shift and field induced tunneling in doped quantum wells with arbitrary potential profiles
Authors
KeywordsPhysics engineerning chemistry
Issue Date1997
PublisherMaterials Research Society. The Journal's web site is located at http://www.mrs.org/publications/epubs/proceedings/spring2004/index.html
Citation
Infrared applications of semiconductors: materials, processing and devices, Materials Research Society Symposium Proceedings, Boston, Massachusetts, USA, 2-5 December 1996, v. 450, p. 165-170 How to Cite?
AbstractThe energies and resonance widths of single doped quantum wells consisting of AlGaAs/GaAs with rectangular and annealing induced diffusion modified shapes are calculated under an uniform electric field using the stabilization method. The electronic structure is calculated without an electric field in the finite temperature density functional theory with exchange-correlation potential treated in the local density approximation. Our scheme for solving the Schrodinger and Poisson equations is based on the Fourier series method. The electric field is added to the self-consistent potential and energies are obtained as a function of the combined width of the well and barriers. This yields us the stabilization graph from which the energies and resonance widths at different field strengths are extracted using the Fermi Golden rule.
Persistent Identifierhttp://hdl.handle.net/10722/47028
ISSN

 

DC FieldValueLanguage
dc.contributor.authorPanda, Sen_HK
dc.contributor.authorPanda, BKen_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorBeling, CDen_HK
dc.date.accessioned2007-10-30T07:04:47Z-
dc.date.available2007-10-30T07:04:47Z-
dc.date.issued1997en_HK
dc.identifier.citationInfrared applications of semiconductors: materials, processing and devices, Materials Research Society Symposium Proceedings, Boston, Massachusetts, USA, 2-5 December 1996, v. 450, p. 165-170en_HK
dc.identifier.issn0272-9172en_HK
dc.identifier.urihttp://hdl.handle.net/10722/47028-
dc.description.abstractThe energies and resonance widths of single doped quantum wells consisting of AlGaAs/GaAs with rectangular and annealing induced diffusion modified shapes are calculated under an uniform electric field using the stabilization method. The electronic structure is calculated without an electric field in the finite temperature density functional theory with exchange-correlation potential treated in the local density approximation. Our scheme for solving the Schrodinger and Poisson equations is based on the Fourier series method. The electric field is added to the self-consistent potential and energies are obtained as a function of the combined width of the well and barriers. This yields us the stabilization graph from which the energies and resonance widths at different field strengths are extracted using the Fermi Golden rule.en_HK
dc.format.extent266928 bytes-
dc.format.extent13983 bytes-
dc.format.extent5932 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherMaterials Research Society. The Journal's web site is located at http://www.mrs.org/publications/epubs/proceedings/spring2004/index.htmlen_HK
dc.relation.ispartofMaterials Research Society Symposium - Proceedingsen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rightsMaterials Research Society Symposium Proceedings. Copyright © Materials Research Society.en_HK
dc.subjectPhysics engineerning chemistryen_HK
dc.titleStark shift and field induced tunneling in doped quantum wells with arbitrary potential profilesen_HK
dc.typeConference_Paperen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0272-9172&volume=450&spage=165&epage=170&date=1997&atitle=Stark+shift+and+field+induced+tunneling+in+doped+quantum+wells+with+arbitrary+potential+profilesen_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.scopuseid_2-s2.0-0030681761en_HK
dc.identifier.hkuros22341-
dc.identifier.volume450en_HK
dc.identifier.spage165en_HK
dc.identifier.epage170en_HK
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridPanda, S=55419719000en_HK
dc.identifier.scopusauthoridPanda, BK=22963418500en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK

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