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Patent History
- ApplicationUS 09/566885 2000-05-08
- GrantedUS 6338922 2002-01-15
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granted patent: Optimized Alternating Phase Shifted Mask Design
Title | Optimized Alternating Phase Shifted Mask Design |
---|---|
Granted Patent | US 6338922 |
Granted Date | 2002-01-15 |
Priority Date | 2000-05-08 US 09/566885 |
Inventors | |
Issue Date | 2002 |
Citation | US Patent 6338922. Washington, DC: US Patent and Trademark Office (USPTO), 2002 How to Cite? |
Abstract | A Method For Reducing Lens Aberrations Sensitivity And Proximity Effects Of Alternating Phase Shifted Masks Is Described. The Critical Features Of A Chip Design Layout Are First Identified. Multiple, Narrow Phase Regions And Auxiliary Phase Transitions, Which Provide Additional Opaque Features, Are Then Formed Alongside The Critical Features Such That A Grating Pattern Of Substantially Uniform Pitch Is Printed. Together With A Complementary Trim Mask, The Circuit Pattern So Delineated Has Reduced Sensitivity To Lens Aberrations And Proximity Effects. |
Persistent Identifier | http://hdl.handle.net/10722/46532 |
References |
DC Field | Value | Language |
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dc.date.accessioned | 2007-10-30T06:52:11Z | - |
dc.date.available | 2007-10-30T06:52:11Z | - |
dc.date.issued | 2002 | - |
dc.identifier.citation | US Patent 6338922. Washington, DC: US Patent and Trademark Office (USPTO), 2002 | en_HK |
dc.identifier.uri | http://hdl.handle.net/10722/46532 | - |
dc.description.abstract | A Method For Reducing Lens Aberrations Sensitivity And Proximity Effects Of Alternating Phase Shifted Masks Is Described. The Critical Features Of A Chip Design Layout Are First Identified. Multiple, Narrow Phase Regions And Auxiliary Phase Transitions, Which Provide Additional Opaque Features, Are Then Formed Alongside The Critical Features Such That A Grating Pattern Of Substantially Uniform Pitch Is Printed. Together With A Complementary Trim Mask, The Circuit Pattern So Delineated Has Reduced Sensitivity To Lens Aberrations And Proximity Effects. | en_HK |
dc.format.extent | 1920221 bytes | - |
dc.format.extent | 5278 bytes | - |
dc.format.mimetype | application/pdf | - |
dc.format.mimetype | text/plain | - |
dc.language | eng | en_HK |
dc.relation.isreferencedby | US 2012089953 (A1) 2012-04-12 | en_HK |
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dc.relation.isreferencedby | US 2005031972 (A1) 2005-02-10 | en_HK |
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dc.relation.isreferencedby | US 2006040188 (A1) 2006-02-23 | en_HK |
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dc.title | Optimized Alternating Phase Shifted Mask Design | en_HK |
dc.type | Patent | en_HK |
dc.description.nature | published_or_final_version | - |
dc.contributor.inventor | Liebmann, L | en_HK |
dc.contributor.inventor | Wong, AKK | en_HK |
patents.identifier.application | US 09/566885 | en_HK |
patents.identifier.granted | US 6338922 | en_HK |
patents.description.assignee | Ibm [Us] | en_HK |
patents.description.country | United States of America | en_HK |
patents.date.granted | 2002-01-15 | en_HK |
dc.relation.references | US 6057063 (A) 2000-05-02 | en_HK |
dc.relation.references | US 5537648 (A) 1996-07-16 | en_HK |
dc.relation.references | US 5636131 (A) 1997-06-03 | en_HK |
dc.relation.references | US 5807649 (A) 1998-09-15 | en_HK |
dc.relation.references | US 5858580 (A) 1999-01-12 | en_HK |
dc.relation.references | US 5883813 (A) 1999-03-16 | en_HK |
patents.date.application | 2000-05-08 | en_HK |
patents.date.priority | 2000-05-08 US 09/566885 | en_HK |
patents.description.cc | US | en_HK |
patents.relation.family | US 6338922 (B1) 2002-01-15 | en_HK |
patents.description.kind | B1 | en_HK |
patents.type | Patent_granted | en_HK |