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  Patent History
  • Application
    US 09/153842 1998-09-15
  • Granted
    US 6223139 2001-04-24
  Patent Family

granted patent: Kernel-Based Fast Aerial Image Computation For A Large Scale Design Of Integrated Circuit Patterns

TitleKernel-Based Fast Aerial Image Computation For A Large Scale Design Of Integrated Circuit Patterns
Granted PatentUS 6223139
Granted Date2001-04-24
Priority Date1998-09-15 US 09/153842
Inventors
Issue Date2001
Citation
US Patent 6223139. Washington, DC: US Patent and Trademark Office (USPTO), 2001 How to Cite?
AbstractA Method Of Simulating Aerial Images Of Large Mask Areas Obtained During The Exposure Step Of A Photo-Lithographic Process When Fabricating A Semiconductor Integrated Circuit Silicon Wafer Is Described. The Method Includes The Steps Of Defining Mask Patterns To Be Projected By The Exposure System To Create Images Of The Mask Patterns; Determining An Appropriate Sampling Range And Sampling Interval; Generating A Characteristic Matrix Describing The Exposure System; Inverting The Matrix To Obtain Eigenvalues As Well As The Eigenvectors (Or Kernels) Representing The Decomposition Of The Exposure System; Convolving The Mask Patterns With These Eigenvectors; And Weighing The Resulting Convolution By The Eigenvalues To Form The Aerial Images. The Method Is Characterized In That The Characteristic Matrix Is Precisely Defined By The Sampling Range And The Sampling Interval, Such That The Sampling Range Is The Shortest Possible And The Sampling Interval, The Largest Possible, Without Sacrificing Accuracy. The Method Of Generating Aerial Images Of Patterns Having Large Mask Areas Provides A Speed Improvement Of Several Orders Of Magnitude Over Conventional Approaches.
Persistent Identifierhttp://hdl.handle.net/10722/46528
References

 

DC FieldValueLanguage
dc.date.accessioned2007-10-30T06:52:04Z-
dc.date.available2007-10-30T06:52:04Z-
dc.date.issued2001-
dc.identifier.citationUS Patent 6223139. Washington, DC: US Patent and Trademark Office (USPTO), 2001en_HK
dc.identifier.urihttp://hdl.handle.net/10722/46528-
dc.description.abstractA Method Of Simulating Aerial Images Of Large Mask Areas Obtained During The Exposure Step Of A Photo-Lithographic Process When Fabricating A Semiconductor Integrated Circuit Silicon Wafer Is Described. The Method Includes The Steps Of Defining Mask Patterns To Be Projected By The Exposure System To Create Images Of The Mask Patterns; Determining An Appropriate Sampling Range And Sampling Interval; Generating A Characteristic Matrix Describing The Exposure System; Inverting The Matrix To Obtain Eigenvalues As Well As The Eigenvectors (Or Kernels) Representing The Decomposition Of The Exposure System; Convolving The Mask Patterns With These Eigenvectors; And Weighing The Resulting Convolution By The Eigenvalues To Form The Aerial Images. The Method Is Characterized In That The Characteristic Matrix Is Precisely Defined By The Sampling Range And The Sampling Interval, Such That The Sampling Range Is The Shortest Possible And The Sampling Interval, The Largest Possible, Without Sacrificing Accuracy. The Method Of Generating Aerial Images Of Patterns Having Large Mask Areas Provides A Speed Improvement Of Several Orders Of Magnitude Over Conventional Approaches.en_HK
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dc.relation.isreferencedbyUS 2011231804 (A1) 2011-09-22en_HK
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dc.rightsCreative Commons: Attribution 3.0 Hong Kong License For Public Patent Documents-
dc.titleKernel-Based Fast Aerial Image Computation For A Large Scale Design Of Integrated Circuit Patternsen_HK
dc.typePatenten_HK
dc.description.naturepublished_or_final_version-
dc.contributor.inventorWong, AKKen_HK
dc.contributor.inventorFerguson, Ren_HK
patents.identifier.applicationUS 09/153842en_HK
patents.identifier.grantedUS 6223139en_HK
patents.description.assigneeIbm [Us]en_HK
patents.description.countryUnited States of Americaen_HK
patents.date.granted2001-04-24en_HK
dc.relation.referencesUS 5631731 (A) 1997-05-20en_HK
dc.relation.referencesUS 6064486 (A) 2000-05-16en_HK
patents.date.application1998-09-15en_HK
patents.date.priority1998-09-15 US 09/153842en_HK
patents.description.ccUSen_HK
patents.relation.familyUS 6223139 (B1) 2001-04-24en_HK
patents.description.kindB1en_HK
patents.typePatent_granteden_HK

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