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Conference Paper: Fabrication of Photovoltaic Cell From Rhenium Containing Polymer

TitleFabrication of Photovoltaic Cell From Rhenium Containing Polymer
Authors
KeywordsBis(arylimino)acenaphthene
Photovoltaic
Poly(p-phenylenevinylene)
Rhenium
Issue Date2004
PublisherS P I E - International Society for Optical Engineering. The Journal's web site is located at http://spie.org/x1848.xml
Citation
Organic photovoltaics IV, San Diego, California, USA, 7-8 August 2003. In Proceedings of SPIE, 2004, v. 5215, p. 254-261 How to Cite?
AbstractPhotovoltaic devices were fabricated using rhenium bis(arylimino) acenaphthene (DIAN) complex containing poly(p-phenylenevinylene). These polymers absorb strongly in the visible region at ca. 440-550 nm. In addition, this type of transition metal based polymers have been shown to exhibit large photo-sensitivity due to the presence of the rhenium complex, which has a relatively long-lived Metal-to-Ligand Charge Transfer (MLCT) character. By using this type of polymers, the metal content can be adjusted easily by simply changing the monomer feed ratio. Moreover, the excited state properties and electronic absorption properties can be modified by varying the structure of the diimine ligand coordinated to the metal. This approach allows us to fine-tune the absorption spectra of the polymers by employing different types of rhenium complex derivatives. PEDOT:PSS and PTCDI were used as the hole and electron transport layers, respectively. The ITO/PEDOT:PSS/DIAN-PPV/PTCDI/Al devices were found to exhibit photovoltaic response under the illumination of AMI solar radiation. The short-circuit current ISC, open-circuit voltage V OC, and the fill factor FF were measured to be 38 μA/cm 2, 0.93 V and 0.21 respectively. Another photovoltaic device was prepared with the structure ITO/PEDOT:PSS/DIAN-PPV:TiO2/PTCDI/Al and its photovoltaic properties were studied. The presence of TiO2 will assist the electron transport of the DIAN-PPV to the PTCDI, in which the electrons can be collected at the aluminium electrode. The short-circuit current ISC open-circuit voltage VOC, and the fill factor FF were measured to be 51 μA/cm2, 1.18 V and 0.12 respectively. It was observed that the power conversion efficiency of photovoltaic devices related closely to the rhenium content and the structure of the rhenium complex used.
Persistent Identifierhttp://hdl.handle.net/10722/45703
ISSN
2023 SCImago Journal Rankings: 0.152
References

 

DC FieldValueLanguage
dc.contributor.authorHui, CSen_HK
dc.contributor.authorWong, HLen_HK
dc.contributor.authorKwong, CYen_HK
dc.contributor.authorChan, WKen_HK
dc.contributor.authorDjurišić, ABen_HK
dc.date.accessioned2007-10-30T06:33:06Z-
dc.date.available2007-10-30T06:33:06Z-
dc.date.issued2004en_HK
dc.identifier.citationOrganic photovoltaics IV, San Diego, California, USA, 7-8 August 2003. In Proceedings of SPIE, 2004, v. 5215, p. 254-261-
dc.identifier.issn0277-786Xen_HK
dc.identifier.urihttp://hdl.handle.net/10722/45703-
dc.description.abstractPhotovoltaic devices were fabricated using rhenium bis(arylimino) acenaphthene (DIAN) complex containing poly(p-phenylenevinylene). These polymers absorb strongly in the visible region at ca. 440-550 nm. In addition, this type of transition metal based polymers have been shown to exhibit large photo-sensitivity due to the presence of the rhenium complex, which has a relatively long-lived Metal-to-Ligand Charge Transfer (MLCT) character. By using this type of polymers, the metal content can be adjusted easily by simply changing the monomer feed ratio. Moreover, the excited state properties and electronic absorption properties can be modified by varying the structure of the diimine ligand coordinated to the metal. This approach allows us to fine-tune the absorption spectra of the polymers by employing different types of rhenium complex derivatives. PEDOT:PSS and PTCDI were used as the hole and electron transport layers, respectively. The ITO/PEDOT:PSS/DIAN-PPV/PTCDI/Al devices were found to exhibit photovoltaic response under the illumination of AMI solar radiation. The short-circuit current ISC, open-circuit voltage V OC, and the fill factor FF were measured to be 38 μA/cm 2, 0.93 V and 0.21 respectively. Another photovoltaic device was prepared with the structure ITO/PEDOT:PSS/DIAN-PPV:TiO2/PTCDI/Al and its photovoltaic properties were studied. The presence of TiO2 will assist the electron transport of the DIAN-PPV to the PTCDI, in which the electrons can be collected at the aluminium electrode. The short-circuit current ISC open-circuit voltage VOC, and the fill factor FF were measured to be 51 μA/cm2, 1.18 V and 0.12 respectively. It was observed that the power conversion efficiency of photovoltaic devices related closely to the rhenium content and the structure of the rhenium complex used.en_HK
dc.format.extent88428 bytes-
dc.format.extent30720 bytes-
dc.format.extent3553 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherS P I E - International Society for Optical Engineering. The Journal's web site is located at http://spie.org/x1848.xmlen_HK
dc.relation.ispartofProceedings of SPIE-
dc.rightsCopyright 2004 Society of Photo‑Optical Instrumentation Engineers (SPIE). One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this publication for a fee or for commercial purposes, and modification of the contents of the publication are prohibited. This article is available online at https://doi.org/10.1117/12.505328-
dc.subjectBis(arylimino)acenaphtheneen_HK
dc.subjectPhotovoltaicen_HK
dc.subjectPoly(p-phenylenevinylene)en_HK
dc.subjectRheniumen_HK
dc.titleFabrication of Photovoltaic Cell From Rhenium Containing Polymeren_HK
dc.typeConference_Paperen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0277-786X&volume=5215&spage=254&epage=261&date=2004&atitle=Fabrication+of+photovoltaic+cell+from+rhenium-containing+polymeren_HK
dc.identifier.emailChan, WK: waichan@hku.hken_HK
dc.identifier.emailDjurišić, AB: dalek@hku.hken_HK
dc.identifier.authorityChan, WK=rp00667en_HK
dc.identifier.authorityDjurišić, AB=rp00690en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1117/12.505328en_HK
dc.identifier.scopuseid_2-s2.0-1942421668en_HK
dc.identifier.hkuros90362-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-1942421668&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume5215en_HK
dc.identifier.spage254en_HK
dc.identifier.epage261en_HK
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridHui, CS=7202876912en_HK
dc.identifier.scopusauthoridWong, HL=36920239500en_HK
dc.identifier.scopusauthoridKwong, CY=35917741900en_HK
dc.identifier.scopusauthoridChan, WK=13310083000en_HK
dc.identifier.scopusauthoridDjurišić, AB=7004904830en_HK
dc.identifier.issnl0277-786X-

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