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Article: Effects of NO annealing and GaOxNy interlayer on GaN metal-insulator-semiconductor capacitor with SiO2 gate dielectric

TitleEffects of NO annealing and GaOxNy interlayer on GaN metal-insulator-semiconductor capacitor with SiO2 gate dielectric
Authors
KeywordsChemistry
Electrochemistry
Issue Date2007
PublisherElectrochemical Society, Inc. The Journal's web site is located at http://ojps.aip.org/JES
Citation
Journal Of The Electrochemical Society, 2007, v. 154 n. 3, p. G58-G62 How to Cite?
AbstractSiO2 was deposited on GaN by radio-frequency sputtering to fabricate metal-insulator-semiconductor (MIS) capacitors. Before the deposition, an ultrathin GaOx Ny interlayer was thermally grown on the GaN wafer to improve the quality of the insulator/ GaN interface. The interface-trap density at 0.4 eV below the conduction bandedge was reduced by one order compared with that of a sample without the GaOx Ny interlayer. Annealing in NO gas at 800°C was conducted on both samples, and turned out to greatly suppress their oxide charges. The NO -annealed sample with the GaOx Ny interlayer achieved the lowest oxide-charge density of 1.7× 1011 cm-2, as compared to 9.5× 1011 cm-2 for its counterpart without the GaOx Ny interlayer and about 8.0× 1012 cm-2 for the two nonannealed samples. Moreover, the NO annealing was found to effectively reduce border traps. Secondary-ion mass spectrometry analysis was performed to explain how the GaOx Ny interlayer and NO annealing affect the performance of the GaN MIS capacitors. © 2007 The Electrochemical Society.
Persistent Identifierhttp://hdl.handle.net/10722/44749
ISSN
2015 Impact Factor: 3.014
2015 SCImago Journal Rankings: 1.157
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorLin, LMen_HK
dc.contributor.authorLai, PTen_HK
dc.date.accessioned2007-10-30T06:09:22Z-
dc.date.available2007-10-30T06:09:22Z-
dc.date.issued2007en_HK
dc.identifier.citationJournal Of The Electrochemical Society, 2007, v. 154 n. 3, p. G58-G62en_HK
dc.identifier.issn0013-4651en_HK
dc.identifier.urihttp://hdl.handle.net/10722/44749-
dc.description.abstractSiO2 was deposited on GaN by radio-frequency sputtering to fabricate metal-insulator-semiconductor (MIS) capacitors. Before the deposition, an ultrathin GaOx Ny interlayer was thermally grown on the GaN wafer to improve the quality of the insulator/ GaN interface. The interface-trap density at 0.4 eV below the conduction bandedge was reduced by one order compared with that of a sample without the GaOx Ny interlayer. Annealing in NO gas at 800°C was conducted on both samples, and turned out to greatly suppress their oxide charges. The NO -annealed sample with the GaOx Ny interlayer achieved the lowest oxide-charge density of 1.7× 1011 cm-2, as compared to 9.5× 1011 cm-2 for its counterpart without the GaOx Ny interlayer and about 8.0× 1012 cm-2 for the two nonannealed samples. Moreover, the NO annealing was found to effectively reduce border traps. Secondary-ion mass spectrometry analysis was performed to explain how the GaOx Ny interlayer and NO annealing affect the performance of the GaN MIS capacitors. © 2007 The Electrochemical Society.en_HK
dc.format.extent742247 bytes-
dc.format.extent6324 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherElectrochemical Society, Inc. The Journal's web site is located at http://ojps.aip.org/JESen_HK
dc.relation.ispartofJournal of the Electrochemical Societyen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rightsJournal of Electrochemical Society. Copyright © Electrochemical Society, Inc.en_HK
dc.rightsReproduced with permission from Journal of Electrochemical Society, 2007, v. 154 n. 3, p. G58-G62. Copyright 2007, The Electrochemical Society. Permission is not needed if figures and/or tables from one ECS publication will be reused in another forthcoming ECS publicationen_HK
dc.subjectChemistryen_HK
dc.subjectElectrochemistryen_HK
dc.titleEffects of NO annealing and GaOxNy interlayer on GaN metal-insulator-semiconductor capacitor with SiO2 gate dielectricen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0013-4651&volume=154&issue=3&spage=G58&epage=G62&date=2007&atitle=Effects+of+NO+annealing+and+GaOxNy+interlayer+on+GaN+metal-insulator-semiconductor+capacitor+with+SiO2+gate+dielectricen_HK
dc.identifier.emailLai, PT:laip@eee.hku.hken_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1149/1.2429043en_HK
dc.identifier.scopuseid_2-s2.0-33846956156en_HK
dc.identifier.hkuros135372-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-33846956156&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume154en_HK
dc.identifier.issue3en_HK
dc.identifier.spageG58en_HK
dc.identifier.epageG62en_HK
dc.identifier.isiWOS:000243977500053-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridLin, LM=8642604900en_HK
dc.identifier.scopusauthoridLai, PT=7202946460en_HK

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