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Article: Modeling of temperature sensor built on thin silicon on insulator using advanced carrier-mobility model

TitleModeling of temperature sensor built on thin silicon on insulator using advanced carrier-mobility model
Authors
KeywordsPhysics Engineering
Issue Date2004
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal Of Applied Physics, 2004, v. 96 n. 5, p. 2955-2960 How to Cite?
AbstractAn analytical device model to study the characteristics of the temperature sensor built on thin silicon film was developed. The device had higher maximum operating temperature due to larger minority-carrier exclusion length. The carrier-concentration distribution in the minority-exclusion region, exclusion length and the temperature dependence of the sensor resistance of the model was verified by device simulation. The model can be used to study the principle of the minority-carrier exclusion effect and also to guide the design of temperature sensors built on thin silicon film for high-temperature applications.
Persistent Identifierhttp://hdl.handle.net/10722/44721
ISSN
2015 Impact Factor: 2.101
2015 SCImago Journal Rankings: 0.603
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorWu, ZHen_HK
dc.contributor.authorLai, PTen_HK
dc.date.accessioned2007-10-30T06:08:44Z-
dc.date.available2007-10-30T06:08:44Z-
dc.date.issued2004en_HK
dc.identifier.citationJournal Of Applied Physics, 2004, v. 96 n. 5, p. 2955-2960en_HK
dc.identifier.issn0021-8979en_HK
dc.identifier.urihttp://hdl.handle.net/10722/44721-
dc.description.abstractAn analytical device model to study the characteristics of the temperature sensor built on thin silicon film was developed. The device had higher maximum operating temperature due to larger minority-carrier exclusion length. The carrier-concentration distribution in the minority-exclusion region, exclusion length and the temperature dependence of the sensor resistance of the model was verified by device simulation. The model can be used to study the principle of the minority-carrier exclusion effect and also to guide the design of temperature sensors built on thin silicon film for high-temperature applications.en_HK
dc.format.extent122570 bytes-
dc.format.extent6324 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_HK
dc.relation.ispartofJournal of Applied Physicsen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectPhysics Engineeringen_HK
dc.titleModeling of temperature sensor built on thin silicon on insulator using advanced carrier-mobility modelen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0021-8979&volume=96&issue=5&spage=2955&epage=2960&date=2004&atitle=Modeling+of+temperature+sensor+built+on+thin+silicon+on+insulator+using+advanced+carrier-mobility+modelen_HK
dc.identifier.emailLai, PT:laip@eee.hku.hken_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.1774266en_HK
dc.identifier.scopuseid_2-s2.0-4944230182en_HK
dc.identifier.hkuros103247-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-4944230182&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume96en_HK
dc.identifier.issue5en_HK
dc.identifier.spage2955en_HK
dc.identifier.epage2960en_HK
dc.identifier.isiWOS:000223719300078-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridWu, ZH=7501411463en_HK
dc.identifier.scopusauthoridLai, PT=7202946460en_HK

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