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Article: Ferromagnetic ground state of an orbital degenerate electronic model for transition-metal oxides: Exact solution and physical mechanism

TitleFerromagnetic ground state of an orbital degenerate electronic model for transition-metal oxides: Exact solution and physical mechanism
Authors
KeywordsPhysics
Issue Date1999
PublisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/
Citation
Physical Review B - Condensed Matter And Materials Physics, 1999, v. 59 n. 5, p. 3291-3294 How to Cite?
AbstractWe present an exact ground-state solution of a one-dimensional electronic model for transition-metal oxides in the strong-coupling limit. The model contains doubly degenerated orbit for itinerant electrons and the Hund coupling between the itinerant electrons and localized spins. The ground state is proven to be a full ferromagnet for any density of electrons. Our model provides a rigorous example for metallic ferromagnetism in narrow-band systems. The physical mechanism for ferromagnetism and its relevance to high-dimensional systems, like R 1-xX xMnO 3, are discussed. Due to the orbital degeneracy of itinerant electrons, the superexchange coupling can be ferromagnetic rather than antiferromagnetic in the half-filled one-band case. ©1999 The American Physical Society.
Persistent Identifierhttp://hdl.handle.net/10722/43259
ISSN
2001 Impact Factor: 3.07
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorShen, SQen_HK
dc.contributor.authorWang, ZDen_HK
dc.date.accessioned2007-03-23T04:42:21Z-
dc.date.available2007-03-23T04:42:21Z-
dc.date.issued1999en_HK
dc.identifier.citationPhysical Review B - Condensed Matter And Materials Physics, 1999, v. 59 n. 5, p. 3291-3294en_HK
dc.identifier.issn0163-1829en_HK
dc.identifier.urihttp://hdl.handle.net/10722/43259-
dc.description.abstractWe present an exact ground-state solution of a one-dimensional electronic model for transition-metal oxides in the strong-coupling limit. The model contains doubly degenerated orbit for itinerant electrons and the Hund coupling between the itinerant electrons and localized spins. The ground state is proven to be a full ferromagnet for any density of electrons. Our model provides a rigorous example for metallic ferromagnetism in narrow-band systems. The physical mechanism for ferromagnetism and its relevance to high-dimensional systems, like R 1-xX xMnO 3, are discussed. Due to the orbital degeneracy of itinerant electrons, the superexchange coupling can be ferromagnetic rather than antiferromagnetic in the half-filled one-band case. ©1999 The American Physical Society.en_HK
dc.format.extent107758 bytes-
dc.format.extent45056 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.languageengen_HK
dc.publisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/en_HK
dc.relation.ispartofPhysical Review B - Condensed Matter and Materials Physicsen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rightsPhysical Review B (Condensed Matter and Materials Physics). Copyright © American Physical Society.en_HK
dc.subjectPhysicsen_HK
dc.titleFerromagnetic ground state of an orbital degenerate electronic model for transition-metal oxides: Exact solution and physical mechanismen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=1098-0121&volume=59&issue=5&spage=3291&epage=3294&date=1999&atitle=Ferromagnetic+ground+state+of+an+orbital+degenerate+electronic+model+for+transition-metal+oxides:+Exact+solution+and+physical+mechanismen_HK
dc.identifier.emailShen, SQ: sshen@hkucc.hku.hken_HK
dc.identifier.emailWang, ZD: zwang@hkucc.hku.hken_HK
dc.identifier.authorityShen, SQ=rp00775en_HK
dc.identifier.authorityWang, ZD=rp00802en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1103/PhysRevB.59.3291en_HK
dc.identifier.scopuseid_2-s2.0-0005302196en_HK
dc.identifier.hkuros39336-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0005302196&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume59en_HK
dc.identifier.issue5en_HK
dc.identifier.spage3291en_HK
dc.identifier.epage3294en_HK
dc.identifier.isiWOS:000078699300008-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridShen, SQ=7403431266en_HK
dc.identifier.scopusauthoridWang, ZD=14828459100en_HK

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