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Article: Interface trap generation by FN injection under dynamic oxide field stress

TitleInterface trap generation by FN injection under dynamic oxide field stress
Authors
KeywordsIntegrated circuit reliability
Mos devices
Mosfet's
Semiconductor device reliability
Silicon materials/ devices
Issue Date1998
PublisherI E E E. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=16
Citation
Ieee Transactions On Electron Devices, 1998, v. 45 n. 9, p. 1920-1926 How to Cite?
AbstractInterface trap generation under dynamic (bipolar and unipolar) and dc oxide field stress has been investigated with the charge pumping technique. It is observed that regardless of stress type, whether dc or dynamic (bipolar or unipolar), and the polarity of stress voltage, interface trap generation starts to occur at the voltage at which Fowler-Nordheim (FN) tunneling through the oxide starts to build up. For positive voltage, interface trap generation is attributed to the recombination of trapped holes with electrons and to the bond breaking by the hydrogen (H and H+) released during stressing. For negative voltage, in addition to these two mechanisms, the bond breaking by energetic electrons may also contribute to interface trap generation. The frequency dependence of interface trap generation is also investigated. Interface trap generation is independent of stressing frequency for unipolar stress but it shows a frequency dependence for bipolar stress. ©1998 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/43240
ISSN
2015 Impact Factor: 2.207
2015 SCImago Journal Rankings: 1.436
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorChen, TPen_HK
dc.contributor.authorLi, Sen_HK
dc.contributor.authorFung, Sen_HK
dc.contributor.authorLo, KFen_HK
dc.date.accessioned2007-03-23T04:41:59Z-
dc.date.available2007-03-23T04:41:59Z-
dc.date.issued1998en_HK
dc.identifier.citationIeee Transactions On Electron Devices, 1998, v. 45 n. 9, p. 1920-1926en_HK
dc.identifier.issn0018-9383en_HK
dc.identifier.urihttp://hdl.handle.net/10722/43240-
dc.description.abstractInterface trap generation under dynamic (bipolar and unipolar) and dc oxide field stress has been investigated with the charge pumping technique. It is observed that regardless of stress type, whether dc or dynamic (bipolar or unipolar), and the polarity of stress voltage, interface trap generation starts to occur at the voltage at which Fowler-Nordheim (FN) tunneling through the oxide starts to build up. For positive voltage, interface trap generation is attributed to the recombination of trapped holes with electrons and to the bond breaking by the hydrogen (H and H+) released during stressing. For negative voltage, in addition to these two mechanisms, the bond breaking by energetic electrons may also contribute to interface trap generation. The frequency dependence of interface trap generation is also investigated. Interface trap generation is independent of stressing frequency for unipolar stress but it shows a frequency dependence for bipolar stress. ©1998 IEEE.en_HK
dc.format.extent133477 bytes-
dc.format.extent14571 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/pdf-
dc.languageengen_HK
dc.publisherI E E E. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=16en_HK
dc.relation.ispartofIEEE Transactions on Electron Devicesen_HK
dc.rights©1998 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.en_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectIntegrated circuit reliabilityen_HK
dc.subjectMos devicesen_HK
dc.subjectMosfet'sen_HK
dc.subjectSemiconductor device reliabilityen_HK
dc.subjectSilicon materials/ devicesen_HK
dc.titleInterface trap generation by FN injection under dynamic oxide field stressen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0018-9383&volume=45&issue=9&spage=1920&epage=1926&date=1998&atitle=Interface+trap+generation+by+FN+injection+under+dynamic+oxide+field+stressen_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1109/16.711356en_HK
dc.identifier.scopuseid_2-s2.0-0032165413en_HK
dc.identifier.hkuros38912-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0032165413&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume45en_HK
dc.identifier.issue9en_HK
dc.identifier.spage1920en_HK
dc.identifier.epage1926en_HK
dc.identifier.isiWOS:000075486100009-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridChen, TP=27169708800en_HK
dc.identifier.scopusauthoridLi, S=7409241368en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.scopusauthoridLo, KF=7402101523en_HK

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