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Article: Interface properties of NO-annealed N2O-grown oxynitride

TitleInterface properties of NO-annealed N2O-grown oxynitride
Authors
Issue Date1999
PublisherI E E E. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=16
Citation
Ieee Transactions On Electron Devices, 1999, v. 46 n. 12, p. 2311-2314 How to Cite?
AbstractThe oxide/Si interface properties of gate dielectric prepared by annealing N2O-grown oxide in an NO ambient are intensively investigated and compared to those of O2-grown oxide with the same annealing conditions. Hot-carrier stressings show that the former has a harder oxide/Si interface and near-interface oxide than the latter. As confirmed by SIMS analysis, this is associated with a higher nitrogen peak concentration near the oxide/Si interface and a larger total nitrogen content in the former, both arising from the initial oxidation in N2O instead of O2.
Persistent Identifierhttp://hdl.handle.net/10722/42823
ISSN
2015 Impact Factor: 2.207
2015 SCImago Journal Rankings: 1.436
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorLai, PTen_HK
dc.contributor.authorXu, JPen_HK
dc.contributor.authorCheng, YCen_HK
dc.date.accessioned2007-03-23T04:32:52Z-
dc.date.available2007-03-23T04:32:52Z-
dc.date.issued1999en_HK
dc.identifier.citationIeee Transactions On Electron Devices, 1999, v. 46 n. 12, p. 2311-2314en_HK
dc.identifier.issn0018-9383en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42823-
dc.description.abstractThe oxide/Si interface properties of gate dielectric prepared by annealing N2O-grown oxide in an NO ambient are intensively investigated and compared to those of O2-grown oxide with the same annealing conditions. Hot-carrier stressings show that the former has a harder oxide/Si interface and near-interface oxide than the latter. As confirmed by SIMS analysis, this is associated with a higher nitrogen peak concentration near the oxide/Si interface and a larger total nitrogen content in the former, both arising from the initial oxidation in N2O instead of O2.en_HK
dc.format.extent88159 bytes-
dc.format.extent27648 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypeapplication/msword-
dc.languageengen_HK
dc.publisherI E E E. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=16en_HK
dc.relation.ispartofIEEE Transactions on Electron Devicesen_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.rights©1999 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.en_HK
dc.titleInterface properties of NO-annealed N2O-grown oxynitrideen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0018-9383&volume=46&issue=12&spage=2311&epage=2314&date=1999&atitle=Interface+properties+of+NO-annealed+N2O-grown+oxynitrideen_HK
dc.identifier.emailLai, PT: laip@eee.hku.hken_HK
dc.identifier.emailXu, JP: jpxu@eee.hku.hken_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.identifier.authorityXu, JP=rp00197en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1109/16.808070en_HK
dc.identifier.scopuseid_2-s2.0-0033351550en_HK
dc.identifier.hkuros47996-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0033351550&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume46en_HK
dc.identifier.issue12en_HK
dc.identifier.spage2311en_HK
dc.identifier.epage2314en_HK
dc.identifier.isiWOS:000084060000008-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridLai, PT=7202946460en_HK
dc.identifier.scopusauthoridXu, JP=7407004696en_HK
dc.identifier.scopusauthoridCheng, YC=27167728600en_HK

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