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Article: Influence of backsurface argon bombardment on SiO2-Si interface characteristics

TitleInfluence of backsurface argon bombardment on SiO2-Si interface characteristics
Authors
Lai, PTHuang, MQZeng, XZeng, SHLi, GQ
KeywordsPhysics engineering
Issue Date1996
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 1996, v. 68 n. 19, p. 2687-2689 How to Cite?
DOI: http://dx.doi.org/10.1063/1.116309
AbstractA low-energy (550 eV) argon-ion beam was used to directly bombard the backsurface of polysilicon-gate metal-oxide-semiconductor (MOS) capacitors after the completion of all conventional processing steps. The interface characteristics of the MOS capacitors were investigated. The results show that, as the bombardment dose increases, the active dopant concentration near the oxide-semiconductor interface gets higher; maximum midgap energy increases; and interface-state density becomes lower. This simple technique is compatible with existing integrated-circuit processing, and can easily improve the interface characteristics, and therefore the electrical characteristics of MOS devices. © 1996 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/42104
ISSN
0003-6951
2023 Impact Factor: 3.5
2023 SCImago Journal Rankings: 0.976
ISI Accession Number ID
WOS:A1996UJ08900029
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorLai, PTen_HK
dc.contributor.authorHuang, MQen_HK
dc.contributor.authorZeng, Xen_HK
dc.contributor.authorZeng, SHen_HK
dc.contributor.authorLi, GQen_HK
dc.date.accessioned2007-01-08T02:29:04Z-
dc.date.available2007-01-08T02:29:04Z-
dc.date.issued1996en_HK
dc.identifier.citationApplied Physics Letters, 1996, v. 68 n. 19, p. 2687-2689-
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/42104-
dc.description.abstractA low-energy (550 eV) argon-ion beam was used to directly bombard the backsurface of polysilicon-gate metal-oxide-semiconductor (MOS) capacitors after the completion of all conventional processing steps. The interface characteristics of the MOS capacitors were investigated. The results show that, as the bombardment dose increases, the active dopant concentration near the oxide-semiconductor interface gets higher; maximum midgap energy increases; and interface-state density becomes lower. This simple technique is compatible with existing integrated-circuit processing, and can easily improve the interface characteristics, and therefore the electrical characteristics of MOS devices. © 1996 American Institute of Physics.en_HK
dc.format.extent56196 bytes-
dc.format.extent3688 bytes-
dc.format.mimetypeapplication/pdf-
dc.format.mimetypetext/plain-
dc.languageengen_HK
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.rightsCopyright 1996 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 1996, v. 68 n. 19, p. 2687-2689 and may be found at https://doi.org/10.1063/1.116309-
dc.subjectPhysics engineeringen_HK
dc.titleInfluence of backsurface argon bombardment on SiO2-Si interface characteristicsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=68&issue=19&spage=2687&epage=2689&date=1996&atitle=Influence+of+backsurface+argon+bombardment+on+SiO2–Si+interface+characteristicsen_HK
dc.identifier.emailLai, PT:laip@eee.hku.hken_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.description.naturepublished_or_final_versionen_HK
dc.identifier.doi10.1063/1.116309en_HK
dc.identifier.scopuseid_2-s2.0-0008639782en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0008639782&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume68en_HK
dc.identifier.issue19en_HK
dc.identifier.spage2687en_HK
dc.identifier.epage2689en_HK
dc.identifier.isiWOS:A1996UJ08900029-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridLai, PT=7202946460en_HK
dc.identifier.scopusauthoridHuang, MQ=7404259759en_HK
dc.identifier.scopusauthoridZeng, X=7403248314en_HK
dc.identifier.scopusauthoridZeng, SH=7202412592en_HK
dc.identifier.scopusauthoridLi, GQ=7407050307en_HK
dc.identifier.issnl0003-6951-

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