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Conference Paper: Threshold voltage and 1/f noise degradation in carbon nanotube field effect transistors under hot-carrier stress

TitleThreshold voltage and 1/f noise degradation in carbon nanotube field effect transistors under hot-carrier stress
Authors
Lim, PaulWang, XinranDai, HongjieNishi, YoshioHarris, James
Issue Date2008
Citation
Device Research Conference - Conference Digest, DRC, 2008, p. 109-110 How to Cite?
DOI: http://dx.doi.org/10.1109/DRC.2008.4800758
Persistent Identifierhttp://hdl.handle.net/10722/334193
ISSN
1548-3770
2020 SCImago Journal Rankings: 0.222

 

DC FieldValueLanguage
dc.contributor.authorLim, Paul-
dc.contributor.authorWang, Xinran-
dc.contributor.authorDai, Hongjie-
dc.contributor.authorNishi, Yoshio-
dc.contributor.authorHarris, James-
dc.date.accessioned2023-10-20T06:46:23Z-
dc.date.available2023-10-20T06:46:23Z-
dc.date.issued2008-
dc.identifier.citationDevice Research Conference - Conference Digest, DRC, 2008, p. 109-110-
dc.identifier.issn1548-3770-
dc.identifier.urihttp://hdl.handle.net/10722/334193-
dc.languageeng-
dc.relation.ispartofDevice Research Conference - Conference Digest, DRC-
dc.titleThreshold voltage and 1/f noise degradation in carbon nanotube field effect transistors under hot-carrier stress-
dc.typeConference_Paper-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1109/DRC.2008.4800758-
dc.identifier.scopuseid_2-s2.0-64849084796-
dc.identifier.spage109-
dc.identifier.epage110-

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