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Conference Paper: Plasma treatment of p-GaN/n-ZnO nanorod light-emitting diodes

TitlePlasma treatment of p-GaN/n-ZnO nanorod light-emitting diodes
Authors
Issue Date2014
PublisherSPIE - International Society for Optical Engineering.
Citation
Oxide-based Materials and Devices V, San Francisco, CA., 1 February 2014. In Proceedings of SPIE, 2014, v. 8987, article no. 898720, p. 1-6 How to Cite?
AbstractZinc oxide (ZnO) is a material of great interest for short-wavelength optoelectronic applications due to its wide band gap (3.37 eV) and high exciton binding energy (60 meV). Due to the difficulty in stable p-type doping of ZnO, other p-type materials such as gallium nitride (GaN) have been used to form heterojunctions with ZnO. p-GaN/n-ZnO heterojunction devices, in particular light-emitting diodes (LED) have been extensively studied. There was a huge variety of electronic properties and emission colors on the reported devices. It is due to the different energy alignment at the interface caused by different properties of the GaN layer and ZnO counterpart in the junction. Attempts have been made on modifying the heterojunction by various methods, such as introducing a dielectric interlayer and post-growth surface treatment, and changing the growth methods of ZnO. In this study, heterojunction LED devices with p-GaN and ZnO nanorods array are demonstrated. The ZnO nanorods were grown by a solution method. The ZnO nanorods were exposed to different kinds of plasma treatments (such as nitrogen and oxygen) after the growth. It was found that the treatment could cause significant change on the optical properties of the ZnO nanorods, as well as the electronic properties and light emissions of the resultant LED devices. © (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
DescriptionConference vol. 8987 entitled: Oxide-based Materials and Devices V
Persistent Identifierhttp://hdl.handle.net/10722/240979
ISSN
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorTeherani, FH-
dc.contributor.authorLook, DC-
dc.contributor.authorRogers, DJ-
dc.contributor.authorLeung, YH-
dc.contributor.authorNg, AMC-
dc.contributor.authorDjurisic, A-
dc.contributor.authorChan, WK-
dc.contributor.authorFong, PWK-
dc.contributor.authorLui, HF-
dc.contributor.authorSurya, C-
dc.date.accessioned2017-05-22T09:20:29Z-
dc.date.available2017-05-22T09:20:29Z-
dc.date.issued2014-
dc.identifier.citationOxide-based Materials and Devices V, San Francisco, CA., 1 February 2014. In Proceedings of SPIE, 2014, v. 8987, article no. 898720, p. 1-6-
dc.identifier.issn0277-786X-
dc.identifier.urihttp://hdl.handle.net/10722/240979-
dc.descriptionConference vol. 8987 entitled: Oxide-based Materials and Devices V-
dc.description.abstractZinc oxide (ZnO) is a material of great interest for short-wavelength optoelectronic applications due to its wide band gap (3.37 eV) and high exciton binding energy (60 meV). Due to the difficulty in stable p-type doping of ZnO, other p-type materials such as gallium nitride (GaN) have been used to form heterojunctions with ZnO. p-GaN/n-ZnO heterojunction devices, in particular light-emitting diodes (LED) have been extensively studied. There was a huge variety of electronic properties and emission colors on the reported devices. It is due to the different energy alignment at the interface caused by different properties of the GaN layer and ZnO counterpart in the junction. Attempts have been made on modifying the heterojunction by various methods, such as introducing a dielectric interlayer and post-growth surface treatment, and changing the growth methods of ZnO. In this study, heterojunction LED devices with p-GaN and ZnO nanorods array are demonstrated. The ZnO nanorods were grown by a solution method. The ZnO nanorods were exposed to different kinds of plasma treatments (such as nitrogen and oxygen) after the growth. It was found that the treatment could cause significant change on the optical properties of the ZnO nanorods, as well as the electronic properties and light emissions of the resultant LED devices. © (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.-
dc.languageeng-
dc.publisherSPIE - International Society for Optical Engineering.-
dc.relation.ispartofProceedings of SPIE-
dc.rightsCopyright 2014 Society of Photo‑Optical Instrumentation Engineers (SPIE). One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this publication for a fee or for commercial purposes, and modification of the contents of the publication are prohibited. This article is available online at https://doi.org/10.1117/12.2042305-
dc.titlePlasma treatment of p-GaN/n-ZnO nanorod light-emitting diodes-
dc.typeConference_Paper-
dc.identifier.emailLeung, YH: ianleung@hku.hk-
dc.identifier.emailNg, AMC: alanalfa@hku.hk-
dc.identifier.emailDjurisic, A: dalek@hku.hk-
dc.identifier.emailChan, WK: waichan@hku.hk-
dc.identifier.authorityLeung, YH=rp01770-
dc.identifier.authorityDjurisic, A=rp00690-
dc.identifier.authorityChan, WK=rp00667-
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1117/12.2042305-
dc.identifier.scopuseid_2-s2.0-84901769089-
dc.identifier.hkuros272119-
dc.identifier.volume8987-
dc.identifier.spagearticle no. 898720, p. 1-
dc.identifier.epagearticle no. 898720, p. 6-
dc.identifier.isiWOS:000337582100049-
dc.publisher.placeUnited States-
dc.customcontrol.immutablesml 170524-

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