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- Publisher Website: 10.1109/SISPAD.2011.6035023
- Scopus: eid_2-s2.0-80054978075
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Conference Paper: A mobility model correction for 'atomistic' drift-diffusion simulation
Title | A mobility model correction for 'atomistic' drift-diffusion simulation |
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Authors | |
Keywords | Atomistic Simulation Mobility Model Density Gradient |
Issue Date | 2011 |
Citation | International Conference on Simulation of Semiconductor Processes and Devices, SISPAD, 2011, p. 279-282 How to Cite? |
Abstract | A comprehensive statistical investigation of the increase in resistance associated with charge trapping in 'atomistic' simulations is presented considering a wide range of doping densities and mesh spacing for both classical and quantum formalisms. A modified mobility model for the 'atomistic' simulations is proposed to suppress the error related to the fictitious charge trapping. © 2011 IEEE. |
Persistent Identifier | http://hdl.handle.net/10722/221324 |
DC Field | Value | Language |
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dc.contributor.author | Amoroso, S. M. | - |
dc.contributor.author | Alexander, C. L. | - |
dc.contributor.author | Markov, S. | - |
dc.contributor.author | Roy, G. | - |
dc.contributor.author | Asenov, A. | - |
dc.date.accessioned | 2015-11-18T06:09:00Z | - |
dc.date.available | 2015-11-18T06:09:00Z | - |
dc.date.issued | 2011 | - |
dc.identifier.citation | International Conference on Simulation of Semiconductor Processes and Devices, SISPAD, 2011, p. 279-282 | - |
dc.identifier.uri | http://hdl.handle.net/10722/221324 | - |
dc.description.abstract | A comprehensive statistical investigation of the increase in resistance associated with charge trapping in 'atomistic' simulations is presented considering a wide range of doping densities and mesh spacing for both classical and quantum formalisms. A modified mobility model for the 'atomistic' simulations is proposed to suppress the error related to the fictitious charge trapping. © 2011 IEEE. | - |
dc.language | eng | - |
dc.relation.ispartof | International Conference on Simulation of Semiconductor Processes and Devices, SISPAD | - |
dc.subject | Atomistic Simulation | - |
dc.subject | Mobility Model | - |
dc.subject | Density Gradient | - |
dc.title | A mobility model correction for 'atomistic' drift-diffusion simulation | - |
dc.type | Conference_Paper | - |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1109/SISPAD.2011.6035023 | - |
dc.identifier.scopus | eid_2-s2.0-80054978075 | - |
dc.identifier.spage | 279 | - |
dc.identifier.epage | 282 | - |