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Conference Paper: A mobility model correction for 'atomistic' drift-diffusion simulation

TitleA mobility model correction for 'atomistic' drift-diffusion simulation
Authors
KeywordsAtomistic Simulation
Mobility Model
Density Gradient
Issue Date2011
Citation
International Conference on Simulation of Semiconductor Processes and Devices, SISPAD, 2011, p. 279-282 How to Cite?
AbstractA comprehensive statistical investigation of the increase in resistance associated with charge trapping in 'atomistic' simulations is presented considering a wide range of doping densities and mesh spacing for both classical and quantum formalisms. A modified mobility model for the 'atomistic' simulations is proposed to suppress the error related to the fictitious charge trapping. © 2011 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/221324

 

DC FieldValueLanguage
dc.contributor.authorAmoroso, S. M.-
dc.contributor.authorAlexander, C. L.-
dc.contributor.authorMarkov, S.-
dc.contributor.authorRoy, G.-
dc.contributor.authorAsenov, A.-
dc.date.accessioned2015-11-18T06:09:00Z-
dc.date.available2015-11-18T06:09:00Z-
dc.date.issued2011-
dc.identifier.citationInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD, 2011, p. 279-282-
dc.identifier.urihttp://hdl.handle.net/10722/221324-
dc.description.abstractA comprehensive statistical investigation of the increase in resistance associated with charge trapping in 'atomistic' simulations is presented considering a wide range of doping densities and mesh spacing for both classical and quantum formalisms. A modified mobility model for the 'atomistic' simulations is proposed to suppress the error related to the fictitious charge trapping. © 2011 IEEE.-
dc.languageeng-
dc.relation.ispartofInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD-
dc.subjectAtomistic Simulation-
dc.subjectMobility Model-
dc.subjectDensity Gradient-
dc.titleA mobility model correction for 'atomistic' drift-diffusion simulation-
dc.typeConference_Paper-
dc.description.natureLink_to_subscribed_fulltext-
dc.identifier.doi10.1109/SISPAD.2011.6035023-
dc.identifier.scopuseid_2-s2.0-80054978075-
dc.identifier.spage279-
dc.identifier.epage282-

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