File Download

There are no files associated with this item.

  Links for fulltext
     (May Require Subscription)
Supplementary

Conference Paper: Design and analysis of photonic crystal for performance enhancement of carbon nanotube based infrared sensors

TitleDesign and analysis of photonic crystal for performance enhancement of carbon nanotube based infrared sensors
Authors
KeywordsParylene
Infrared light
Silicon
Photonic crystal
Issue Date2010
Citation
2010 IEEE Nanotechnology Materials and Devices Conference, NMDC2010, 2010, p. 177-182 How to Cite?
AbstractThe photonic crystals of parylene and silicon dielectric media for infrared light localization are analyzed in this paper. The Bloch's theorem is adopted to calculate the infrared light transmission in two-dimensional photonic crystal. First, the band gap diagrams for photonic crystal of parylene and silicon are calculated and compared respectively. It is revealed that the photonic crystal of parylene rods in air has a bigger band gap for TM than that for TE mode. In the photonic crystal of air hole in dielectric slab, the stop band width for TE mode is bigger than that for TM wave, and the band gap of silicon photonic crystal is more obvious than that of parylene slab. The energy distribution and boundary condition of electrical field in the interface of dielectric media are considered to be responsible for the reason of the band gap differences for TE and TM wave. Second, the band gap vs. air hole radius of parylene and silicon photonic crystal is obtained, which shows the relationship of stop band width vs. air hole radius. Third, the infrared light localization in point defect is found, and the electrical field profiles for both parylene and silicon photonic crystals are shown. The central point defect in photonic crystal acts as a resonant cavity to confine infrared light and reach high photon density. Finally, the energy confinement efficiency vs. lattice arrangement of photonic crystal is calculated, which can be useful for photonic crystal design and fabrication. © 2010 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/213141

 

DC FieldValueLanguage
dc.contributor.authorLou, Jianyong-
dc.contributor.authorXi, Ning-
dc.contributor.authorFung, Carmen Kar Man-
dc.contributor.authorLai, King Wai Chiu-
dc.contributor.authorChen, Liangliang-
dc.contributor.authorChen, Hongzhi-
dc.date.accessioned2015-07-28T04:06:16Z-
dc.date.available2015-07-28T04:06:16Z-
dc.date.issued2010-
dc.identifier.citation2010 IEEE Nanotechnology Materials and Devices Conference, NMDC2010, 2010, p. 177-182-
dc.identifier.urihttp://hdl.handle.net/10722/213141-
dc.description.abstractThe photonic crystals of parylene and silicon dielectric media for infrared light localization are analyzed in this paper. The Bloch's theorem is adopted to calculate the infrared light transmission in two-dimensional photonic crystal. First, the band gap diagrams for photonic crystal of parylene and silicon are calculated and compared respectively. It is revealed that the photonic crystal of parylene rods in air has a bigger band gap for TM than that for TE mode. In the photonic crystal of air hole in dielectric slab, the stop band width for TE mode is bigger than that for TM wave, and the band gap of silicon photonic crystal is more obvious than that of parylene slab. The energy distribution and boundary condition of electrical field in the interface of dielectric media are considered to be responsible for the reason of the band gap differences for TE and TM wave. Second, the band gap vs. air hole radius of parylene and silicon photonic crystal is obtained, which shows the relationship of stop band width vs. air hole radius. Third, the infrared light localization in point defect is found, and the electrical field profiles for both parylene and silicon photonic crystals are shown. The central point defect in photonic crystal acts as a resonant cavity to confine infrared light and reach high photon density. Finally, the energy confinement efficiency vs. lattice arrangement of photonic crystal is calculated, which can be useful for photonic crystal design and fabrication. © 2010 IEEE.-
dc.languageeng-
dc.relation.ispartof2010 IEEE Nanotechnology Materials and Devices Conference, NMDC2010-
dc.subjectParylene-
dc.subjectInfrared light-
dc.subjectSilicon-
dc.subjectPhotonic crystal-
dc.titleDesign and analysis of photonic crystal for performance enhancement of carbon nanotube based infrared sensors-
dc.typeConference_Paper-
dc.description.natureLink_to_subscribed_fulltext-
dc.identifier.doi10.1109/NMDC.2010.5652235-
dc.identifier.scopuseid_2-s2.0-78651495342-
dc.identifier.spage177-
dc.identifier.epage182-

Export via OAI-PMH Interface in XML Formats


OR


Export to Other Non-XML Formats