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Conference Paper: Analysis and design of carbon nanotube based field effect transistors for nano infrared sensors

TitleAnalysis and design of carbon nanotube based field effect transistors for nano infrared sensors
Authors
Issue Date2010
Citation
2010 IEEE Nanotechnology Materials and Devices Conference, NMDC2010, 2010, p. 164-168 How to Cite?
AbstractIt has been demonstrated that carbon nanotube field effect transistor (CNTFET) is a promising device to improve the performance of carbon nanotube (CNT) infrared (IR) sensors by modulating the doping level of the CNT channel. However, how tooptimize the performance of the CNTFET based IR sensor is not well understood. In particularly, there was limited study on thedesign of transistor's gate structure, which determines its energyband profile. In order to improve our understating of its detection mechanism and guide for an optimized design, a multi-gateCNTFET was fabricated, which can control the doping level of the source, drain and nanotube channel independently. Photovoltaic characteristics were observed in bias dependent measurement by varying the intensity of incident IR source. In addition, the polarization dependent measurement was conducted, the detector showed clearly polarization anisotropy, and highest photocurrent was obtained when the polarization is parallel to the nanotube. Its temporal photocurrent responses using different gates were investigated. The results showed that photocurrent had similar photo-responses by applying voltages to the gates at different positions, implying the sensor design can be simplified into a single gate. © 2010 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/213138

 

DC FieldValueLanguage
dc.contributor.authorChen, Hongzhi-
dc.contributor.authorXi, Ning-
dc.contributor.authorLai, King W C-
dc.contributor.authorFung, Carmen K M-
dc.contributor.authorChen, Liangliang-
dc.contributor.authorLou, Jianyong-
dc.date.accessioned2015-07-28T04:06:15Z-
dc.date.available2015-07-28T04:06:15Z-
dc.date.issued2010-
dc.identifier.citation2010 IEEE Nanotechnology Materials and Devices Conference, NMDC2010, 2010, p. 164-168-
dc.identifier.urihttp://hdl.handle.net/10722/213138-
dc.description.abstractIt has been demonstrated that carbon nanotube field effect transistor (CNTFET) is a promising device to improve the performance of carbon nanotube (CNT) infrared (IR) sensors by modulating the doping level of the CNT channel. However, how tooptimize the performance of the CNTFET based IR sensor is not well understood. In particularly, there was limited study on thedesign of transistor's gate structure, which determines its energyband profile. In order to improve our understating of its detection mechanism and guide for an optimized design, a multi-gateCNTFET was fabricated, which can control the doping level of the source, drain and nanotube channel independently. Photovoltaic characteristics were observed in bias dependent measurement by varying the intensity of incident IR source. In addition, the polarization dependent measurement was conducted, the detector showed clearly polarization anisotropy, and highest photocurrent was obtained when the polarization is parallel to the nanotube. Its temporal photocurrent responses using different gates were investigated. The results showed that photocurrent had similar photo-responses by applying voltages to the gates at different positions, implying the sensor design can be simplified into a single gate. © 2010 IEEE.-
dc.languageeng-
dc.relation.ispartof2010 IEEE Nanotechnology Materials and Devices Conference, NMDC2010-
dc.titleAnalysis and design of carbon nanotube based field effect transistors for nano infrared sensors-
dc.typeConference_Paper-
dc.description.natureLink_to_subscribed_fulltext-
dc.identifier.doi10.1109/NMDC.2010.5652169-
dc.identifier.scopuseid_2-s2.0-78651484428-
dc.identifier.spage164-
dc.identifier.epage168-

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