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Conference Paper: Electric field assisted fabrication on Si and HOPG surfaces by AFM

TitleElectric field assisted fabrication on Si and HOPG surfaces by AFM
Authors
Issue Date2008
Citation
2008 2nd IEEE International Nanoelectronics Conference, INEC 2008, 2008, p. 1155-1158 How to Cite?
AbstractIn this paper, we present two different results of oxidation using the same electric field assisted nano-fabrication method by atomic force microscope (AFM). Experiments were performed on silicon (Si) and highly oriented pyrolytic graphite (HOPG) surfaces respectively. Raised oxide lines were formed on Si surface, whereas sunken etch grooves were got on HOPG surface after the fabrication. We conclude that different materials may form different oxide structures in the oxidation fabrication: positive structure (raised oxide line) or negative structure (etch groove). By utilizing these oxide structures reasonably we may fabricate novel nano patterns and devices. © 2008 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/213011

 

DC FieldValueLanguage
dc.contributor.authorJiao, Niandong-
dc.contributor.authorWang, Yuechao-
dc.contributor.authorXi, Ning-
dc.contributor.authorDong, Zaili-
dc.date.accessioned2015-07-28T04:05:45Z-
dc.date.available2015-07-28T04:05:45Z-
dc.date.issued2008-
dc.identifier.citation2008 2nd IEEE International Nanoelectronics Conference, INEC 2008, 2008, p. 1155-1158-
dc.identifier.urihttp://hdl.handle.net/10722/213011-
dc.description.abstractIn this paper, we present two different results of oxidation using the same electric field assisted nano-fabrication method by atomic force microscope (AFM). Experiments were performed on silicon (Si) and highly oriented pyrolytic graphite (HOPG) surfaces respectively. Raised oxide lines were formed on Si surface, whereas sunken etch grooves were got on HOPG surface after the fabrication. We conclude that different materials may form different oxide structures in the oxidation fabrication: positive structure (raised oxide line) or negative structure (etch groove). By utilizing these oxide structures reasonably we may fabricate novel nano patterns and devices. © 2008 IEEE.-
dc.languageeng-
dc.relation.ispartof2008 2nd IEEE International Nanoelectronics Conference, INEC 2008-
dc.titleElectric field assisted fabrication on Si and HOPG surfaces by AFM-
dc.typeConference_Paper-
dc.description.natureLink_to_subscribed_fulltext-
dc.identifier.doi10.1109/INEC.2008.4585687-
dc.identifier.scopuseid_2-s2.0-52649127391-
dc.identifier.spage1155-
dc.identifier.epage1158-

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