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Conference Paper: Electron field emission characteristics of textured silicon surface

TitleElectron field emission characteristics of textured silicon surface
Authors
Issue Date2001
Citation
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 2001, v. 19, n. 3, p. 884-887 How to Cite?
AbstractPotassium hydroxide (KOH) and isopropyl alcohol (IPA) solutions were used for the fabrication of very high densely randomly distributed silicon field emitter. Dilute inorganic alkaline in IPA solution was used for the investigation of a texturing process. The surface roughness of the silicon wafer was significantly increased with the use of KOH and IPA solutions. Surface roughness was found to be influenced by the emission current. Randomly distributed pyramids on the crystallographic plane were formed without any masking pattern. The results showed improvement in the field emission properties after high dose carbon implantation.
Persistent Identifierhttp://hdl.handle.net/10722/206291
ISSN
2015 Impact Factor: 1.398
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorFung, Yi Man Eva-
dc.contributor.authorCheung, WingYiu-
dc.contributor.authorWilson, Ian Howard-
dc.contributor.authorChen, Dihu-
dc.contributor.authorXu, Jianbin-
dc.contributor.authorWong, Saipeng-
dc.contributor.authorKwok, Raymund Wai Man-
dc.date.accessioned2014-10-22T01:25:34Z-
dc.date.available2014-10-22T01:25:34Z-
dc.date.issued2001-
dc.identifier.citationJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 2001, v. 19, n. 3, p. 884-887-
dc.identifier.issn1071-1023-
dc.identifier.urihttp://hdl.handle.net/10722/206291-
dc.description.abstractPotassium hydroxide (KOH) and isopropyl alcohol (IPA) solutions were used for the fabrication of very high densely randomly distributed silicon field emitter. Dilute inorganic alkaline in IPA solution was used for the investigation of a texturing process. The surface roughness of the silicon wafer was significantly increased with the use of KOH and IPA solutions. Surface roughness was found to be influenced by the emission current. Randomly distributed pyramids on the crystallographic plane were formed without any masking pattern. The results showed improvement in the field emission properties after high dose carbon implantation.-
dc.languageeng-
dc.relation.ispartofJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures-
dc.titleElectron field emission characteristics of textured silicon surface-
dc.typeConference_Paper-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1116/1.1361040-
dc.identifier.scopuseid_2-s2.0-0035326482-
dc.identifier.volume19-
dc.identifier.issue3-
dc.identifier.spage884-
dc.identifier.epage887-
dc.identifier.isiWOS:000169366600049-

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