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Conference Paper: Silicon field emitter array by fast anodization method
Title | Silicon field emitter array by fast anodization method |
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Authors | |
Issue Date | 2000 |
Citation | Materials Research Society Symposium - Proceedings, 2000, v. 621, p. R541-R546 How to Cite? |
Abstract | A new fast fabrication method entailing, two step anodization of silicon with different HF solutions was used to form a high aspect ratio silicon Field Emitter Array on n-type silicon (resistivity of 0.01Ωcm). A Silicon oxide mask was used to define the field emitter array. The silicon substrate was pre-anodized with low current density for 1 minute in the dark and then anodized in HF:H2O:Ethanol solution. Finally, the porous silicon was removed by isotropic solution etching. The turn-on voltage of the fabricated field emitters was approximately 27V/μm when the emission current density reaches 1μA/cm2. This compares with the turn-on field of about 35V/μm on silicon tip array fabricated by using an isotropic etching solution of HNO3. We obtained field emitter arrays with good uniformity and reproducibility. |
Persistent Identifier | http://hdl.handle.net/10722/206290 |
ISSN | 2019 SCImago Journal Rankings: 0.114 |
DC Field | Value | Language |
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dc.contributor.author | Fung, Yi Man Eva | - |
dc.contributor.author | Cheung, WingYiu | - |
dc.contributor.author | Wilson, Ian Howard | - |
dc.contributor.author | Xu, Jianbin | - |
dc.contributor.author | Wong, Saipeng | - |
dc.date.accessioned | 2014-10-22T01:25:34Z | - |
dc.date.available | 2014-10-22T01:25:34Z | - |
dc.date.issued | 2000 | - |
dc.identifier.citation | Materials Research Society Symposium - Proceedings, 2000, v. 621, p. R541-R546 | - |
dc.identifier.issn | 0272-9172 | - |
dc.identifier.uri | http://hdl.handle.net/10722/206290 | - |
dc.description.abstract | A new fast fabrication method entailing, two step anodization of silicon with different HF solutions was used to form a high aspect ratio silicon Field Emitter Array on n-type silicon (resistivity of 0.01Ωcm). A Silicon oxide mask was used to define the field emitter array. The silicon substrate was pre-anodized with low current density for 1 minute in the dark and then anodized in HF:H2O:Ethanol solution. Finally, the porous silicon was removed by isotropic solution etching. The turn-on voltage of the fabricated field emitters was approximately 27V/μm when the emission current density reaches 1μA/cm2. This compares with the turn-on field of about 35V/μm on silicon tip array fabricated by using an isotropic etching solution of HNO3. We obtained field emitter arrays with good uniformity and reproducibility. | - |
dc.language | eng | - |
dc.relation.ispartof | Materials Research Society Symposium - Proceedings | - |
dc.title | Silicon field emitter array by fast anodization method | - |
dc.type | Conference_Paper | - |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.scopus | eid_2-s2.0-0034429806 | - |
dc.identifier.volume | 621 | - |
dc.identifier.spage | R541 | - |
dc.identifier.epage | R546 | - |
dc.identifier.issnl | 0272-9172 | - |