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Conference Paper: Silicon field emitter array by fast anodization method

TitleSilicon field emitter array by fast anodization method
Authors
Issue Date2000
Citation
Materials Research Society Symposium - Proceedings, 2000, v. 621, p. R541-R546 How to Cite?
AbstractA new fast fabrication method entailing, two step anodization of silicon with different HF solutions was used to form a high aspect ratio silicon Field Emitter Array on n-type silicon (resistivity of 0.01Ωcm). A Silicon oxide mask was used to define the field emitter array. The silicon substrate was pre-anodized with low current density for 1 minute in the dark and then anodized in HF:H2O:Ethanol solution. Finally, the porous silicon was removed by isotropic solution etching. The turn-on voltage of the fabricated field emitters was approximately 27V/μm when the emission current density reaches 1μA/cm2. This compares with the turn-on field of about 35V/μm on silicon tip array fabricated by using an isotropic etching solution of HNO3. We obtained field emitter arrays with good uniformity and reproducibility.
Persistent Identifierhttp://hdl.handle.net/10722/206290
ISSN

 

DC FieldValueLanguage
dc.contributor.authorFung, Yi Man Eva-
dc.contributor.authorCheung, WingYiu-
dc.contributor.authorWilson, Ian Howard-
dc.contributor.authorXu, Jianbin-
dc.contributor.authorWong, Saipeng-
dc.date.accessioned2014-10-22T01:25:34Z-
dc.date.available2014-10-22T01:25:34Z-
dc.date.issued2000-
dc.identifier.citationMaterials Research Society Symposium - Proceedings, 2000, v. 621, p. R541-R546-
dc.identifier.issn0272-9172-
dc.identifier.urihttp://hdl.handle.net/10722/206290-
dc.description.abstractA new fast fabrication method entailing, two step anodization of silicon with different HF solutions was used to form a high aspect ratio silicon Field Emitter Array on n-type silicon (resistivity of 0.01Ωcm). A Silicon oxide mask was used to define the field emitter array. The silicon substrate was pre-anodized with low current density for 1 minute in the dark and then anodized in HF:H2O:Ethanol solution. Finally, the porous silicon was removed by isotropic solution etching. The turn-on voltage of the fabricated field emitters was approximately 27V/μm when the emission current density reaches 1μA/cm2. This compares with the turn-on field of about 35V/μm on silicon tip array fabricated by using an isotropic etching solution of HNO3. We obtained field emitter arrays with good uniformity and reproducibility.-
dc.languageeng-
dc.relation.ispartofMaterials Research Society Symposium - Proceedings-
dc.titleSilicon field emitter array by fast anodization method-
dc.typeConference_Paper-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.scopuseid_2-s2.0-0034429806-
dc.identifier.volume621-
dc.identifier.spageR541-
dc.identifier.epageR546-

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