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Conference Paper: Field emission characteristics of SiC capped Si tip array by ion beam synthesis
Title | Field emission characteristics of SiC capped Si tip array by ion beam synthesis |
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Authors | |
Issue Date | 1999 |
Publisher | American Vacuum Society. The Journal's web site is located at https://avs.scitation.org/journal/jva |
Citation | Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 1999, v. 17 n. 4, p. 2109-2112 How to Cite? |
Abstract | High dose carbon implantation into Si tip array was performed to synthesize SiC/Si heterostructure tip array. This was done using a high beam current density metal vapor vacuum arc ion source. Silicon tip arrays were prepared by anisotropic chemical etching. An implantation energy of 35 keV using a dose of 1.0 ×1018 ions/cm2 was performed. The array was subsequently annealed in argon ambient at 1200°C, for various times to form the SiC surface layer. Scanning electron microscopy shows that the Si tips were sharp and uniformly arranged. X-ray photoelectron spectroscopy confirmed that a thin SiC surface layer had been formed. Results show that electron emission properties measured in ultrahigh vacuum depended on the sample treatment. A typical turn-on field was 15 V/μm when the emission current density reaches 1 μA/cm2. This compares with a turn-on field of about 35 V/μm for an unimplanted Si tip array. © 1999 American Vacuum Society. |
Persistent Identifier | http://hdl.handle.net/10722/206245 |
ISSN | 2023 Impact Factor: 2.4 2023 SCImago Journal Rankings: 0.569 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Chen, Dihu | - |
dc.contributor.author | Cheung, WingYiu | - |
dc.contributor.author | Wong, Saipeng | - |
dc.contributor.author | Fung, Yi Man Eva | - |
dc.contributor.author | Xu, Jianbin | - |
dc.contributor.author | Wilson, Ian Howard | - |
dc.contributor.author | Kwok, Raymund Wai Man | - |
dc.date.accessioned | 2014-10-22T01:25:30Z | - |
dc.date.available | 2014-10-22T01:25:30Z | - |
dc.date.issued | 1999 | - |
dc.identifier.citation | Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 1999, v. 17 n. 4, p. 2109-2112 | - |
dc.identifier.issn | 0734-2101 | - |
dc.identifier.uri | http://hdl.handle.net/10722/206245 | - |
dc.description.abstract | High dose carbon implantation into Si tip array was performed to synthesize SiC/Si heterostructure tip array. This was done using a high beam current density metal vapor vacuum arc ion source. Silicon tip arrays were prepared by anisotropic chemical etching. An implantation energy of 35 keV using a dose of 1.0 ×1018 ions/cm2 was performed. The array was subsequently annealed in argon ambient at 1200°C, for various times to form the SiC surface layer. Scanning electron microscopy shows that the Si tips were sharp and uniformly arranged. X-ray photoelectron spectroscopy confirmed that a thin SiC surface layer had been formed. Results show that electron emission properties measured in ultrahigh vacuum depended on the sample treatment. A typical turn-on field was 15 V/μm when the emission current density reaches 1 μA/cm2. This compares with a turn-on field of about 35 V/μm for an unimplanted Si tip array. © 1999 American Vacuum Society. | - |
dc.language | eng | - |
dc.publisher | American Vacuum Society. The Journal's web site is located at https://avs.scitation.org/journal/jva | - |
dc.relation.ispartof | Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films | - |
dc.title | Field emission characteristics of SiC capped Si tip array by ion beam synthesis | - |
dc.type | Conference_Paper | - |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1116/1.581734 | - |
dc.identifier.scopus | eid_2-s2.0-78649761484 | - |
dc.identifier.volume | 17 | - |
dc.identifier.issue | 4 | - |
dc.identifier.spage | 2109 | - |
dc.identifier.epage | 2112 | - |
dc.identifier.isi | WOS:000081485800060 | - |
dc.identifier.issnl | 0734-2101 | - |