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Conference Paper: Field emission characteristics of SiC capped Si tip array by ion beam synthesis

TitleField emission characteristics of SiC capped Si tip array by ion beam synthesis
Authors
Issue Date1999
Citation
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 1999, v. 17, n. 4, p. 2109-2112 How to Cite?
AbstractHigh dose carbon implantation into Si tip array was performed to synthesize SiC/Si heterostructure tip array. This was done using a high beam current density metal vapor vacuum arc ion source. Silicon tip arrays were prepared by anisotropic chemical etching. An implantation energy of 35 keV using a dose of 1.0 ×1018 ions/cm2 was performed. The array was subsequently annealed in argon ambient at 1200°C, for various times to form the SiC surface layer. Scanning electron microscopy shows that the Si tips were sharp and uniformly arranged. X-ray photoelectron spectroscopy confirmed that a thin SiC surface layer had been formed. Results show that electron emission properties measured in ultrahigh vacuum depended on the sample treatment. A typical turn-on field was 15 V/μm when the emission current density reaches 1 μA/cm2. This compares with a turn-on field of about 35 V/μm for an unimplanted Si tip array. © 1999 American Vacuum Society.
Persistent Identifierhttp://hdl.handle.net/10722/206245
ISSN
2015 Impact Factor: 1.724
2015 SCImago Journal Rankings: 0.339
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorChen, Dihu-
dc.contributor.authorCheung, WingYiu-
dc.contributor.authorWong, Saipeng-
dc.contributor.authorFung, Yi Man Eva-
dc.contributor.authorXu, Jianbin-
dc.contributor.authorWilson, Ian Howard-
dc.contributor.authorKwok, Raymund Wai Man-
dc.date.accessioned2014-10-22T01:25:30Z-
dc.date.available2014-10-22T01:25:30Z-
dc.date.issued1999-
dc.identifier.citationJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 1999, v. 17, n. 4, p. 2109-2112-
dc.identifier.issn0734-2101-
dc.identifier.urihttp://hdl.handle.net/10722/206245-
dc.description.abstractHigh dose carbon implantation into Si tip array was performed to synthesize SiC/Si heterostructure tip array. This was done using a high beam current density metal vapor vacuum arc ion source. Silicon tip arrays were prepared by anisotropic chemical etching. An implantation energy of 35 keV using a dose of 1.0 ×1018 ions/cm2 was performed. The array was subsequently annealed in argon ambient at 1200°C, for various times to form the SiC surface layer. Scanning electron microscopy shows that the Si tips were sharp and uniformly arranged. X-ray photoelectron spectroscopy confirmed that a thin SiC surface layer had been formed. Results show that electron emission properties measured in ultrahigh vacuum depended on the sample treatment. A typical turn-on field was 15 V/μm when the emission current density reaches 1 μA/cm2. This compares with a turn-on field of about 35 V/μm for an unimplanted Si tip array. © 1999 American Vacuum Society.-
dc.languageeng-
dc.relation.ispartofJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films-
dc.titleField emission characteristics of SiC capped Si tip array by ion beam synthesis-
dc.typeConference_Paper-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1116/1.581734-
dc.identifier.scopuseid_2-s2.0-78649761484-
dc.identifier.volume17-
dc.identifier.issue4-
dc.identifier.spage2109-
dc.identifier.epage2112-
dc.identifier.isiWOS:000081485800060-

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