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Article: Resonance Raman scattering in bulk 2H-MX2 (M=Mo, W; X=S, Se) and monolayer MoS2

TitleResonance Raman scattering in bulk 2H-MX2 (M=Mo, W; X=S, Se) and monolayer MoS2
Authors
Issue Date2014
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal of Applied Physics, 2014, v. 115 n. 5, article no. 053527, p. 1-7 How to Cite?
AbstractWe have performed a comparative study of resonance Raman scattering in transition-metal dichalcogenides 2H-MX 2 semiconductors (M = Mo, W; X = S, Se) and single-layer MoS 2 . Raman spectra were collected using excitation wavelengths 633 nm (1.96 eV), 594 nm (2.09 eV), 532 nm (2.33 eV), 514 nm (2.41 eV), and 488 nm (2.54 eV). In bulk-MoS 2 and WS 2 , the resonant energies appear to coincide with their exciton excitations. The resonance can be fine tuned by varying sample temperatures, which confirms its excitonic origin in both MoS 2 and WS 2 . Temperature dependence of Raman intensities is analyzed in the context of resonance Raman theory, which agrees well with the existing absorption data. While in WSe 2 , the resonance has been observed in a wider range of excitations from 633 to 514 nm, which cannot be explained with its excitonic energies of 1.6 and 2.0 eV. It is considered that additional excitonic bands induced by band splitting are involved in the inter-band transitions and substantially extend the resonance energy range. The Raman resonance energy range remains unchanged in single-layer MoS 2 compared with that in the bulk sample. However, most phonon modes in single-layer MoS 2 are significantly broadened or strongly suppressed under resonance conditions. This change could be related to the modification of acoustic modes by the substrate. © 2014 AIP Publishing LLC.
Persistent Identifierhttp://hdl.handle.net/10722/197632
ISSN
2017 Impact Factor: 2.176
2015 SCImago Journal Rankings: 0.603
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorFan, JHen_US
dc.contributor.authorGao, Pen_US
dc.contributor.authorZhang, AMen_US
dc.contributor.authorZhu, Ben_US
dc.contributor.authorZeng, Hen_US
dc.contributor.authorCui, Xen_US
dc.contributor.authorHe, Ren_US
dc.contributor.authorZhang, QMen_US
dc.date.accessioned2014-05-29T08:32:24Z-
dc.date.available2014-05-29T08:32:24Z-
dc.date.issued2014en_US
dc.identifier.citationJournal of Applied Physics, 2014, v. 115 n. 5, article no. 053527, p. 1-7-
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://hdl.handle.net/10722/197632-
dc.description.abstractWe have performed a comparative study of resonance Raman scattering in transition-metal dichalcogenides 2H-MX 2 semiconductors (M = Mo, W; X = S, Se) and single-layer MoS 2 . Raman spectra were collected using excitation wavelengths 633 nm (1.96 eV), 594 nm (2.09 eV), 532 nm (2.33 eV), 514 nm (2.41 eV), and 488 nm (2.54 eV). In bulk-MoS 2 and WS 2 , the resonant energies appear to coincide with their exciton excitations. The resonance can be fine tuned by varying sample temperatures, which confirms its excitonic origin in both MoS 2 and WS 2 . Temperature dependence of Raman intensities is analyzed in the context of resonance Raman theory, which agrees well with the existing absorption data. While in WSe 2 , the resonance has been observed in a wider range of excitations from 633 to 514 nm, which cannot be explained with its excitonic energies of 1.6 and 2.0 eV. It is considered that additional excitonic bands induced by band splitting are involved in the inter-band transitions and substantially extend the resonance energy range. The Raman resonance energy range remains unchanged in single-layer MoS 2 compared with that in the bulk sample. However, most phonon modes in single-layer MoS 2 are significantly broadened or strongly suppressed under resonance conditions. This change could be related to the modification of acoustic modes by the substrate. © 2014 AIP Publishing LLC.-
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_US
dc.relation.ispartofJournal of Applied Physicsen_US
dc.rightsCopyright 2014 AIP Publishing LLC. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Journal of Applied Physics, 2014, v. 115 n. 5, article no. 053527, p. 1-7 and may be found at https://doi.org/10.1063/1.4862859-
dc.titleResonance Raman scattering in bulk 2H-MX2 (M=Mo, W; X=S, Se) and monolayer MoS2en_US
dc.typeArticleen_US
dc.identifier.emailZhu, B: zhubair@hku.hken_US
dc.identifier.emailZeng, H: hualingz@hku.hken_US
dc.identifier.emailCui, X: xdcui@hku.hken_US
dc.identifier.authorityCui, X=rp00689en_US
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1063/1.4862859en_US
dc.identifier.scopuseid_2-s2.0-84904700761-
dc.identifier.hkuros228838en_US
dc.identifier.volume115en_US
dc.identifier.issue5-
dc.identifier.spagearticle no. 053527, p. 1-
dc.identifier.epagearticle no. 053527, p. 7-
dc.identifier.isiWOS:000331645900033-
dc.publisher.placeUnited Statesen_US

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