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Conference Paper: Effects of fluorine plasma and ammonia annealing on pentacene thin-film transistor with HfTiO as gate dielectric

TitleEffects of fluorine plasma and ammonia annealing on pentacene thin-film transistor with HfTiO as gate dielectric
Authors
KeywordsOTFT
High k
HjTiO
Dielectric
Issue Date2013
PublisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/conhome.jsp?punumber=1000853
Citation
The 2013 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC), Hong Kong, 3-5 June 2013. In Conference Proceedings, 2013, p. 1-2 How to Cite?
AbstractPentacene organic thin-film transistor (OTFT) with high-K HffiO gate dielectric has been fabricated. The effects of fluorine plasma and ammonia annealing on the properties of the OTFT have been studied. After treating the dielectric in the plasma, the carrier mobility of the transistor can be improved by about 5 times to 0.0883 cm2/V•s. Moreover, the fluorine plasma treatment can shift the threshold voltage of the device in the positive direction. Experimental results also show that NH3 annealing can enhance the OTFT performance in terms of higher mobility, smaller sub-threshold slope and larger on/off ratio.
Persistent Identifierhttp://hdl.handle.net/10722/191584
ISBN

 

DC FieldValueLanguage
dc.contributor.authorHan, Cen_US
dc.contributor.authorLeung, CHen_US
dc.contributor.authorLai, PTen_US
dc.contributor.authorTang, WMen_US
dc.contributor.authorChe, CMen_US
dc.date.accessioned2013-10-15T07:13:16Z-
dc.date.available2013-10-15T07:13:16Z-
dc.date.issued2013en_US
dc.identifier.citationThe 2013 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC), Hong Kong, 3-5 June 2013. In Conference Proceedings, 2013, p. 1-2en_US
dc.identifier.isbn978-1-4673-2523-3-
dc.identifier.urihttp://hdl.handle.net/10722/191584-
dc.description.abstractPentacene organic thin-film transistor (OTFT) with high-K HffiO gate dielectric has been fabricated. The effects of fluorine plasma and ammonia annealing on the properties of the OTFT have been studied. After treating the dielectric in the plasma, the carrier mobility of the transistor can be improved by about 5 times to 0.0883 cm2/V•s. Moreover, the fluorine plasma treatment can shift the threshold voltage of the device in the positive direction. Experimental results also show that NH3 annealing can enhance the OTFT performance in terms of higher mobility, smaller sub-threshold slope and larger on/off ratio.-
dc.languageengen_US
dc.publisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/conhome.jsp?punumber=1000853-
dc.relation.ispartofIEEE Conference on Electron Devices and Solid-State Circuits Proceedingsen_US
dc.rightsIEEE Conference on Electron Devices and Solid-State Circuits Proceedings. Copyright © IEEE.-
dc.rights©2013 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.-
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectOTFT-
dc.subjectHigh k-
dc.subjectHjTiO-
dc.subjectDielectric-
dc.titleEffects of fluorine plasma and ammonia annealing on pentacene thin-film transistor with HfTiO as gate dielectricen_US
dc.typeConference_Paperen_US
dc.identifier.emailLeung, CH: chleung@eee.hku.hken_US
dc.identifier.emailLai, PT: laip@eee.hku.hken_US
dc.identifier.emailChe, CM: cmche@hku.hken_US
dc.identifier.authorityLeung, CH=rp00146en_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.identifier.authorityChe, CM=rp00670en_US
dc.description.naturepublished_or_final_version-
dc.identifier.hkuros226059en_US
dc.identifier.spage1-
dc.identifier.epage2-
dc.publisher.placeUnited Statesen_US
dc.customcontrol.immutablesml 131108-

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