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Conference Paper: Effects of fluorine plasma and ammonia annealing on pentacene thin -film transistor with ZrLaOx as gate dielectric

TitleEffects of fluorine plasma and ammonia annealing on pentacene thin -film transistor with ZrLaOx as gate dielectric
Authors
KeywordsFluorine plasma
Low supply voltages
Organic thin film transistors
Pentacene thin-film transistors
Pentacenes / Plasma treatment
Issue Date2012
PublisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/conhome.jsp?punumber=1000707
Citation
The 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT 2012), Xi'an, China, 29 October-1 November 2012. In Conference Proceedings, 2012, p. 1-3 How to Cite?
AbstractPentacene organic thin-film transistor (OTFT) based on ZrLaOx gate dielectric is proposed and has been fabricated. The effects of fluorine plasma and ammonia annealing on the properties of the OTFT have been studied. It reveals that the plasma treatment can greatly improve carrier mobility and shift the threshold voltage in the positive direction. With a threshold voltage less than 0.5 V, the OTFT can work at very low supply voltage. On the other hand, the ensuing ammonia annealing counteracts the plasma treatment and shifts the threshold voltage in the opposite direction. © 2012 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/191583
ISBN

 

DC FieldValueLanguage
dc.contributor.authorHan, Cen_US
dc.contributor.authorLai, PTen_US
dc.contributor.authorLeung, CHen_US
dc.contributor.authorChe, CMen_US
dc.date.accessioned2013-10-15T07:13:15Z-
dc.date.available2013-10-15T07:13:15Z-
dc.date.issued2012en_US
dc.identifier.citationThe 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT 2012), Xi'an, China, 29 October-1 November 2012. In Conference Proceedings, 2012, p. 1-3en_US
dc.identifier.isbn978-1-4673-2475-5-
dc.identifier.urihttp://hdl.handle.net/10722/191583-
dc.description.abstractPentacene organic thin-film transistor (OTFT) based on ZrLaOx gate dielectric is proposed and has been fabricated. The effects of fluorine plasma and ammonia annealing on the properties of the OTFT have been studied. It reveals that the plasma treatment can greatly improve carrier mobility and shift the threshold voltage in the positive direction. With a threshold voltage less than 0.5 V, the OTFT can work at very low supply voltage. On the other hand, the ensuing ammonia annealing counteracts the plasma treatment and shifts the threshold voltage in the opposite direction. © 2012 IEEE.-
dc.languageengen_US
dc.publisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/conhome.jsp?punumber=1000707-
dc.relation.ispartofInternational Conference on Solid-State and Integrated Circuit Technology Proceedingsen_US
dc.rightsInternational Conference on Solid-State and Integrated Circuit Technology Proceedings. Copyright © IEEE.-
dc.rights©2012 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.-
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectFluorine plasma-
dc.subjectLow supply voltages-
dc.subjectOrganic thin film transistors-
dc.subjectPentacene thin-film transistors-
dc.subjectPentacenes / Plasma treatment-
dc.titleEffects of fluorine plasma and ammonia annealing on pentacene thin -film transistor with ZrLaOx as gate dielectricen_US
dc.typeConference_Paperen_US
dc.identifier.emailLai, PT: laip@eee.hku.hken_US
dc.identifier.emailLeung, CH: chleung@eee.hku.hken_US
dc.identifier.emailChe, CM: cmche@hku.hken_US
dc.identifier.authorityLai, PT=rp00130en_US
dc.identifier.authorityLeung, CH=rp00146en_US
dc.identifier.authorityChe, CM=rp00670en_US
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1109/ICSICT.2012.6467743-
dc.identifier.scopuseid_2-s2.0-84874889216-
dc.identifier.hkuros226018en_US
dc.identifier.spage1-
dc.identifier.epage3-
dc.publisher.placeUnited Statesen_US
dc.customcontrol.immutablesml 131107-

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