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  Patent History
  • Application
    US 09/008022 2001-11-05
  • Publication
    US 2002096429 2002-07-25
Supplementary

published patent: Josephson junctions with a continually graded barrier

TitleJosephson junctions with a continually graded barrier
Priority Date2001-11-05 US 09/008022
2000-11-06 US 09/246172P
Inventors
Issue Date2002
Citation
US Published patent application US 2002096429. Washington, DC: US Patent and Trademark Office (USPTO), 2002 How to Cite?
AbstractA Josephson junction includes first and second electrodes, each of which is formed of superconductive material. The first electrode has a first electrode face. A barrier of the junction extends from the first electrode to the second electrode. The barrier has a first barrier face opposing and adjoining the first electrode face. The barrier is formed of non-superconductive barrier material and superconductive barrier material. A concentration of the superconductive barrier material is greater than zero at the first barrier face, whereby the first barrier face is formed at least partially of the superconductive barrier material.
Persistent Identifierhttp://hdl.handle.net/10722/176824

 

DC FieldValueLanguage
dc.date.accessioned2012-11-30T08:38:32Z-
dc.date.available2012-11-30T08:38:32Z-
dc.date.issued2002-
dc.identifier.citationUS Published patent application US 2002096429. Washington, DC: US Patent and Trademark Office (USPTO), 2002en_HK
dc.identifier.urihttp://hdl.handle.net/10722/176824-
dc.description.abstractA Josephson junction includes first and second electrodes, each of which is formed of superconductive material. The first electrode has a first electrode face. A barrier of the junction extends from the first electrode to the second electrode. The barrier has a first barrier face opposing and adjoining the first electrode face. The barrier is formed of non-superconductive barrier material and superconductive barrier material. A concentration of the superconductive barrier material is greater than zero at the first barrier face, whereby the first barrier face is formed at least partially of the superconductive barrier material.en_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License For Public Patent Documentsen_US
dc.titleJosephson junctions with a continually graded barrieren_HK
dc.typePatenten_US
dc.description.naturepublished_or_final_versionen_US
dc.contributor.inventorGao, Jen_HK
dc.contributor.inventorSun Jinglanen_HK
patents.identifier.applicationUS 09/008022en_HK
patents.description.assigneeGAO JU, ; SUN JINGLAN, ; THE UNIVERSITY OF HONG KONGen_HK
patents.description.countryUnited States of Americaen_HK
patents.date.publication2002-07-25en_HK
patents.date.application2001-11-05en_HK
patents.date.priority2001-11-05 US 09/008022en_HK
patents.date.priority2000-11-06 US 09/246172Pen_HK
patents.description.ccUSen_HK
patents.identifier.publicationUS 2002096429en_HK
patents.relation.familyUS 2002096429 (A1) 2002-07-25en_HK
patents.relation.familyUS 6818918 (B2) 2004-11-16en_HK
patents.description.kindA1en_HK
patents.typePatent_publisheden_HK

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