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Conference Paper: Influence of annealing on ZnO nanorod/NiO LEDs
Title | Influence of annealing on ZnO nanorod/NiO LEDs |
---|---|
Authors | |
Keywords | LED NiO ZnO |
Issue Date | 2009 |
Publisher | American Institute of Physics. The Journal's web site is located at http://proceedings.aip.org/ |
Citation | AIP Conference Proceedings, 2009, v. 1199 n. 1, p. 513-514 How to Cite? |
Abstract | Zinc oxide (ZnO) is a promising candidate for short-wavelength optoelectronic devices. Due to the lack of stability and reproducibility of p-type ZnO, ZnO heterojunction devices are of considerable interest. In this work, the performance of ZnO nanorod/NiO light emitting diodes (LEDs) was investigated. Both materials were fabricated using inexpensive solution based process. Due to the low fabrication temperature, ZnO nanorods contained considerable concentration of point defects. Post-fabrication treatments could significantly change ZnO nanorod properties. The effect of post-fabrication annealing on ZnO properties and device performance were discussed. © 2009 American Institute of Physics. |
Persistent Identifier | http://hdl.handle.net/10722/168851 |
ISSN | 2023 SCImago Journal Rankings: 0.152 |
References |
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Hsu, YF | en_HK |
dc.contributor.author | Xi, YY | en_HK |
dc.contributor.author | Djurišić, AB | en_HK |
dc.contributor.author | Ng, AMC | en_HK |
dc.contributor.author | Chan, WK | en_HK |
dc.date.accessioned | 2012-10-08T03:35:03Z | - |
dc.date.available | 2012-10-08T03:35:03Z | - |
dc.date.issued | 2009 | en_HK |
dc.identifier.citation | AIP Conference Proceedings, 2009, v. 1199 n. 1, p. 513-514 | - |
dc.identifier.issn | 0094-243X | en_HK |
dc.identifier.uri | http://hdl.handle.net/10722/168851 | - |
dc.description.abstract | Zinc oxide (ZnO) is a promising candidate for short-wavelength optoelectronic devices. Due to the lack of stability and reproducibility of p-type ZnO, ZnO heterojunction devices are of considerable interest. In this work, the performance of ZnO nanorod/NiO light emitting diodes (LEDs) was investigated. Both materials were fabricated using inexpensive solution based process. Due to the low fabrication temperature, ZnO nanorods contained considerable concentration of point defects. Post-fabrication treatments could significantly change ZnO nanorod properties. The effect of post-fabrication annealing on ZnO properties and device performance were discussed. © 2009 American Institute of Physics. | en_HK |
dc.language | eng | en_US |
dc.publisher | American Institute of Physics. The Journal's web site is located at http://proceedings.aip.org/ | - |
dc.relation.ispartof | AIP Conference Proceedings | en_HK |
dc.subject | LED | en_HK |
dc.subject | NiO | en_HK |
dc.subject | ZnO | en_HK |
dc.title | Influence of annealing on ZnO nanorod/NiO LEDs | en_HK |
dc.type | Conference_Paper | en_HK |
dc.identifier.email | Djurišić, AB: dalek@hku.hk | en_HK |
dc.identifier.email | Chan, WK: waichan@hku.hk | en_HK |
dc.identifier.authority | Djurišić, AB=rp00690 | en_HK |
dc.identifier.authority | Chan, WK=rp00667 | en_HK |
dc.description.nature | link_to_subscribed_fulltext | en_US |
dc.identifier.doi | 10.1063/1.3295533 | en_HK |
dc.identifier.scopus | eid_2-s2.0-74849111215 | en_HK |
dc.relation.references | http://www.scopus.com/mlt/select.url?eid=2-s2.0-74849111215&selection=ref&src=s&origin=recordpage | en_HK |
dc.identifier.volume | 1199 | en_HK |
dc.identifier.issue | 1 | - |
dc.identifier.spage | 513 | en_HK |
dc.identifier.epage | 514 | en_HK |
dc.publisher.place | United States | en_HK |
dc.identifier.scopusauthorid | Hsu, YF=16063930300 | en_HK |
dc.identifier.scopusauthorid | Xi, YY=23053521800 | en_HK |
dc.identifier.scopusauthorid | Djurišić, AB=7004904830 | en_HK |
dc.identifier.scopusauthorid | Ng, AMC=12140078600 | en_HK |
dc.identifier.scopusauthorid | Chan, WK=13310083000 | en_HK |
dc.identifier.issnl | 0094-243X | - |