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Conference Paper: ZnO nanorods by hydrothermal method for ZnO/GaN LEDs
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TitleZnO nanorods by hydrothermal method for ZnO/GaN LEDs
 
AuthorsTam, KH1
Ng, AMC1
Leung, YH1
Djurišić, AB1
Chan, WK1
Gwo, S2
 
KeywordsHydrothermal
LED
Zinc oxide
 
Issue Date2006
 
CitationConference On Optoelectronic And Microelectronic Materials And Devices, Proceedings, Commad, 2006, p. 109-112 [How to Cite?]
DOI: http://dx.doi.org/10.1109/COMMAD.2006.4429892
 
AbstractZinc oxide (ZnO) has been attractive for optoelectronics application due to its wide band gap (Eg=3.37 eV) and large exciton binding energy (∼60 meV) characteristics. However, p-type doping of ZnO is still controversial and problematic. Therefore, there is considerable interest in fabrication of n-ZnO/p-GaN heterojunction LEDs. In this work, we fabricated the LEDs consisting of n-ZnO nanorod arrays on p-GaN substrate. ZnO nanorod arrays were fabricated by a hydrothermal method. Hydrothermal methods have the advantage that they are simple, inexpensive and environmentally friendly. However, nanorods fabricated by hydrothermal methods typically have large numbers of defects due to the low growth temperature (90°C). The defect related photoluminescence (PL) is significantly affected by annealing, and under suitable conditions it can be entirely eliminated. Asgrown nanorods exhibit UV emission and large yellow defect emission which is likely due to the presence of OH groups. The PL spectra can be significantly improved by annealing the nanorods at 200°C under Ar flow. Therefore we investigated the influence of argon annealing of ZnO nanorods on the performance of ZnO/GaN LEDs, as well as the influence of annealing environments. Devices with ZnO rod length ∼ 250 nm were fabricated and the results obtained are discussed. © 2006 IEEE.
 
DOIhttp://dx.doi.org/10.1109/COMMAD.2006.4429892
 
ReferencesReferences in Scopus
 
DC FieldValue
dc.contributor.authorTam, KH
 
dc.contributor.authorNg, AMC
 
dc.contributor.authorLeung, YH
 
dc.contributor.authorDjurišić, AB
 
dc.contributor.authorChan, WK
 
dc.contributor.authorGwo, S
 
dc.date.accessioned2012-10-08T03:34:58Z
 
dc.date.available2012-10-08T03:34:58Z
 
dc.date.issued2006
 
dc.description.abstractZinc oxide (ZnO) has been attractive for optoelectronics application due to its wide band gap (Eg=3.37 eV) and large exciton binding energy (∼60 meV) characteristics. However, p-type doping of ZnO is still controversial and problematic. Therefore, there is considerable interest in fabrication of n-ZnO/p-GaN heterojunction LEDs. In this work, we fabricated the LEDs consisting of n-ZnO nanorod arrays on p-GaN substrate. ZnO nanorod arrays were fabricated by a hydrothermal method. Hydrothermal methods have the advantage that they are simple, inexpensive and environmentally friendly. However, nanorods fabricated by hydrothermal methods typically have large numbers of defects due to the low growth temperature (90°C). The defect related photoluminescence (PL) is significantly affected by annealing, and under suitable conditions it can be entirely eliminated. Asgrown nanorods exhibit UV emission and large yellow defect emission which is likely due to the presence of OH groups. The PL spectra can be significantly improved by annealing the nanorods at 200°C under Ar flow. Therefore we investigated the influence of argon annealing of ZnO nanorods on the performance of ZnO/GaN LEDs, as well as the influence of annealing environments. Devices with ZnO rod length ∼ 250 nm were fabricated and the results obtained are discussed. © 2006 IEEE.
 
dc.description.naturelink_to_subscribed_fulltext
 
dc.identifier.citationConference On Optoelectronic And Microelectronic Materials And Devices, Proceedings, Commad, 2006, p. 109-112 [How to Cite?]
DOI: http://dx.doi.org/10.1109/COMMAD.2006.4429892
 
dc.identifier.doihttp://dx.doi.org/10.1109/COMMAD.2006.4429892
 
dc.identifier.epage112
 
dc.identifier.scopuseid_2-s2.0-44849122354
 
dc.identifier.spage109
 
dc.identifier.urihttp://hdl.handle.net/10722/168844
 
dc.languageeng
 
dc.relation.ispartofConference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD
 
dc.relation.referencesReferences in Scopus
 
dc.subjectHydrothermal
 
dc.subjectLED
 
dc.subjectZinc oxide
 
dc.titleZnO nanorods by hydrothermal method for ZnO/GaN LEDs
 
dc.typeConference_Paper
 
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Author Affiliations
  1. The University of Hong Kong
  2. National Tsing Hua University