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Conference Paper: ZnO nanorods by hydrothermal method for ZnO/GaN LEDs

TitleZnO nanorods by hydrothermal method for ZnO/GaN LEDs
Authors
KeywordsHydrothermal
LED
Zinc oxide
Issue Date2006
Citation
Conference On Optoelectronic And Microelectronic Materials And Devices, Proceedings, Commad, 2006, p. 109-112 How to Cite?
AbstractZinc oxide (ZnO) has been attractive for optoelectronics application due to its wide band gap (Eg=3.37 eV) and large exciton binding energy (∼60 meV) characteristics. However, p-type doping of ZnO is still controversial and problematic. Therefore, there is considerable interest in fabrication of n-ZnO/p-GaN heterojunction LEDs. In this work, we fabricated the LEDs consisting of n-ZnO nanorod arrays on p-GaN substrate. ZnO nanorod arrays were fabricated by a hydrothermal method. Hydrothermal methods have the advantage that they are simple, inexpensive and environmentally friendly. However, nanorods fabricated by hydrothermal methods typically have large numbers of defects due to the low growth temperature (90°C). The defect related photoluminescence (PL) is significantly affected by annealing, and under suitable conditions it can be entirely eliminated. Asgrown nanorods exhibit UV emission and large yellow defect emission which is likely due to the presence of OH groups. The PL spectra can be significantly improved by annealing the nanorods at 200°C under Ar flow. Therefore we investigated the influence of argon annealing of ZnO nanorods on the performance of ZnO/GaN LEDs, as well as the influence of annealing environments. Devices with ZnO rod length ∼ 250 nm were fabricated and the results obtained are discussed. © 2006 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/168844
References

 

DC FieldValueLanguage
dc.contributor.authorTam, KHen_HK
dc.contributor.authorNg, AMCen_HK
dc.contributor.authorLeung, YHen_HK
dc.contributor.authorDjurišić, ABen_HK
dc.contributor.authorChan, WKen_HK
dc.contributor.authorGwo, Sen_HK
dc.date.accessioned2012-10-08T03:34:58Z-
dc.date.available2012-10-08T03:34:58Z-
dc.date.issued2006en_HK
dc.identifier.citationConference On Optoelectronic And Microelectronic Materials And Devices, Proceedings, Commad, 2006, p. 109-112en_US
dc.identifier.urihttp://hdl.handle.net/10722/168844-
dc.description.abstractZinc oxide (ZnO) has been attractive for optoelectronics application due to its wide band gap (Eg=3.37 eV) and large exciton binding energy (∼60 meV) characteristics. However, p-type doping of ZnO is still controversial and problematic. Therefore, there is considerable interest in fabrication of n-ZnO/p-GaN heterojunction LEDs. In this work, we fabricated the LEDs consisting of n-ZnO nanorod arrays on p-GaN substrate. ZnO nanorod arrays were fabricated by a hydrothermal method. Hydrothermal methods have the advantage that they are simple, inexpensive and environmentally friendly. However, nanorods fabricated by hydrothermal methods typically have large numbers of defects due to the low growth temperature (90°C). The defect related photoluminescence (PL) is significantly affected by annealing, and under suitable conditions it can be entirely eliminated. Asgrown nanorods exhibit UV emission and large yellow defect emission which is likely due to the presence of OH groups. The PL spectra can be significantly improved by annealing the nanorods at 200°C under Ar flow. Therefore we investigated the influence of argon annealing of ZnO nanorods on the performance of ZnO/GaN LEDs, as well as the influence of annealing environments. Devices with ZnO rod length ∼ 250 nm were fabricated and the results obtained are discussed. © 2006 IEEE.en_HK
dc.languageengen_US
dc.relation.ispartofConference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMADen_HK
dc.subjectHydrothermalen_HK
dc.subjectLEDen_HK
dc.subjectZinc oxideen_HK
dc.titleZnO nanorods by hydrothermal method for ZnO/GaN LEDsen_HK
dc.typeConference_Paperen_HK
dc.identifier.emailDjurišić, AB: dalek@hku.hken_HK
dc.identifier.emailChan, WK: waichan@hku.hken_HK
dc.identifier.authorityDjurišić, AB=rp00690en_HK
dc.identifier.authorityChan, WK=rp00667en_HK
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1109/COMMAD.2006.4429892en_HK
dc.identifier.scopuseid_2-s2.0-44849122354en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-44849122354&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.spage109en_HK
dc.identifier.epage112en_HK
dc.identifier.scopusauthoridTam, KH=8533246200en_HK
dc.identifier.scopusauthoridNg, AMC=12140078600en_HK
dc.identifier.scopusauthoridLeung, YH=16042693500en_HK
dc.identifier.scopusauthoridDjurišić, AB=7004904830en_HK
dc.identifier.scopusauthoridChan, WK=13310083000en_HK
dc.identifier.scopusauthoridGwo, S=18835295800en_HK

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