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Article: Optical anisotropy of InAs submonolayer quantum wells in a (311) GaAs matrix

TitleOptical anisotropy of InAs submonolayer quantum wells in a (311) GaAs matrix
Authors
Chen, YHYang, ZWang, ZGXu, BLiang, JBQian, JJ
Issue Date1998
PublisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/apsusc
Citation
Applied Surface Science, 1998, v. 123-124, p. 343-346 How to Cite?
AbstractThe steplike density of states obtained from reflectance-difference spectroscopy demonstrates that ultrathin InAs layers should be regarded as two-dimensional quantum wells rather than isolated clusters, even for the sample with only 1/3 monolayer InAs in (311)-oriented GaAs. The degree of anisotropy is within the intrinsic anisotropy of (311)-oriented ultrathin quantum wells, indicating that there is little structural or strain anisotropy in the InAs islands. © 1998 Elsevier Science B.V.
Persistent Identifierhttp://hdl.handle.net/10722/156477
ISSN
0169-4332
2023 Impact Factor: 6.3
2023 SCImago Journal Rankings: 1.210
ISI Accession Number ID
WOS:000072196800067
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorChen, YHen_US
dc.contributor.authorYang, Zen_US
dc.contributor.authorWang, ZGen_US
dc.contributor.authorXu, Ben_US
dc.contributor.authorLiang, JBen_US
dc.contributor.authorQian, JJen_US
dc.date.accessioned2012-08-08T08:42:34Z-
dc.date.available2012-08-08T08:42:34Z-
dc.date.issued1998en_US
dc.identifier.citationApplied Surface Science, 1998, v. 123-124, p. 343-346en_US
dc.identifier.issn0169-4332en_US
dc.identifier.urihttp://hdl.handle.net/10722/156477-
dc.description.abstractThe steplike density of states obtained from reflectance-difference spectroscopy demonstrates that ultrathin InAs layers should be regarded as two-dimensional quantum wells rather than isolated clusters, even for the sample with only 1/3 monolayer InAs in (311)-oriented GaAs. The degree of anisotropy is within the intrinsic anisotropy of (311)-oriented ultrathin quantum wells, indicating that there is little structural or strain anisotropy in the InAs islands. © 1998 Elsevier Science B.V.en_US
dc.languageengen_US
dc.publisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/apsuscen_US
dc.relation.ispartofApplied Surface Scienceen_US
dc.titleOptical anisotropy of InAs submonolayer quantum wells in a (311) GaAs matrixen_US
dc.typeArticleen_US
dc.identifier.emailChen, YH:yhchen@hkucc.hku.hken_US
dc.identifier.authorityChen, YH=rp00099en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-0031655118en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0031655118&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume123-124en_US
dc.identifier.spage343en_US
dc.identifier.epage346en_US
dc.identifier.isiWOS:000072196800067-
dc.publisher.placeNetherlandsen_US
dc.identifier.scopusauthoridChen, YH=7601430448en_US
dc.identifier.scopusauthoridYang, Z=7405432276en_US
dc.identifier.scopusauthoridWang, ZG=36077454600en_US
dc.identifier.scopusauthoridXu, B=36047386500en_US
dc.identifier.scopusauthoridLiang, JB=7404541652en_US
dc.identifier.scopusauthoridQian, JJ=7402196249en_US
dc.identifier.issnl0169-4332-

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