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Article: Localization and mobility gap in the topological Anderson insulator

TitleLocalization and mobility gap in the topological Anderson insulator
Authors
Zhang, YYChu, RLZhang, FCShen, SQ
Issue Date2012
PublisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/
Citation
Physical Review B (Condensed Matter and Materials Physics), 2012, v. 85 n. 3, article no. 035107 How to Cite?
DOI: http://dx.doi.org/10.1103/PhysRevB.85.035107
AbstractIt has been proposed that disorder may lead to a new type of topological insulator, called the topological Anderson insulator (TAI). Here we examine the physical origin of this phenomenon. We calculate the topological invariants and density of states of the disordered model in a supercell of a two-dimensional HgTe/CdTe quantum well. The topologically nontrivial phase is triggered by a band touching as the disorder strength increases. The TAI is protected by a mobility gap, in contrast to the band gap in conventional quantum spin Hall systems. The mobility gap in the TAI consists of a cluster of nontrivial subgaps separated by almost flat and localized bands. © 2012 American Physical Society.
Persistent Identifierhttp://hdl.handle.net/10722/145926
ISSN
1098-0121
2014 Impact Factor: 3.736
ISI Accession Number ID
WOS:000299117300004
Funding AgencyGrant Number
Research Grant Council of Hong KongHKU705110P
Funding Information:

This work was supported by the Research Grant Council of Hong Kong under Grant No. HKU705110P.

References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorZhang, YYen_HK
dc.contributor.authorChu, RLen_HK
dc.contributor.authorZhang, FCen_HK
dc.contributor.authorShen, SQen_HK
dc.date.accessioned2012-03-27T09:02:10Z-
dc.date.available2012-03-27T09:02:10Z-
dc.date.issued2012en_HK
dc.identifier.citationPhysical Review B (Condensed Matter and Materials Physics), 2012, v. 85 n. 3, article no. 035107-
dc.identifier.issn1098-0121en_HK
dc.identifier.urihttp://hdl.handle.net/10722/145926-
dc.description.abstractIt has been proposed that disorder may lead to a new type of topological insulator, called the topological Anderson insulator (TAI). Here we examine the physical origin of this phenomenon. We calculate the topological invariants and density of states of the disordered model in a supercell of a two-dimensional HgTe/CdTe quantum well. The topologically nontrivial phase is triggered by a band touching as the disorder strength increases. The TAI is protected by a mobility gap, in contrast to the band gap in conventional quantum spin Hall systems. The mobility gap in the TAI consists of a cluster of nontrivial subgaps separated by almost flat and localized bands. © 2012 American Physical Society.en_HK
dc.languageengen_US
dc.publisherAmerican Physical Society. The Journal's web site is located at http://prb.aps.org/en_HK
dc.relation.ispartofPhysical Review B (Condensed Matter and Materials Physics)-
dc.rightsCopyright 2012 by The American Physical Society. This article is available online at https://doi.org/10.1103/PhysRevB.85.035107-
dc.titleLocalization and mobility gap in the topological Anderson insulatoren_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=1098-0121&volume=85&spage=035107:1&epage=7&date=2012&atitle=Localization+and+mobility+gap+in+the+topological+Anderson+insulatoren_US
dc.identifier.emailZhang, FC: fuchun@hkucc.hku.hken_HK
dc.identifier.authorityZhang, FC=rp00840en_HK
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1103/PhysRevB.85.035107en_HK
dc.identifier.scopuseid_2-s2.0-84863011932en_HK
dc.identifier.hkuros199050en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-84863011932&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume85en_HK
dc.identifier.issue3en_HK
dc.identifier.spagearticle no. 035107-
dc.identifier.epagearticle no. 035107-
dc.identifier.isiWOS:000299117300004-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridZhang, YY=8982421400en_HK
dc.identifier.scopusauthoridChu, RL=25925722300en_HK
dc.identifier.scopusauthoridZhang, FC=14012468800en_HK
dc.identifier.scopusauthoridShen, SQ=54941637500en_HK
dc.identifier.issnl1098-0121-

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