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  Patent History
  • Application
    US 06/884706 1986-07-11
  • Granted
    US 4789437 1988-12-06
  Patent Family
Supplementary

granted patent: Pulse Electroplating Process

TitlePulse Electroplating Process
Granted PatentUS 4789437
Granted Date1988-12-06
Priority Date1986-07-11 US 06/884706
Inventors
Issue Date1988
Citation
US Patent 4789437. Washington, DC: US Patent and Trademark Office (USPTO), 1988 How to Cite?
AbstractA Process Is Provided For Obtaining Crack-Free Deposits Of Rhodium By A Pulse Electroplating Process.
Persistent Identifierhttp://hdl.handle.net/10722/142077
References

 

DC FieldValueLanguage
dc.date.accessioned2011-10-19T06:29:28Z-
dc.date.available2011-10-19T06:29:28Z-
dc.date.issued1988-
dc.identifier.citationUS Patent 4789437. Washington, DC: US Patent and Trademark Office (USPTO), 1988en_HK
dc.identifier.urihttp://hdl.handle.net/10722/142077-
dc.description.abstractA Process Is Provided For Obtaining Crack-Free Deposits Of Rhodium By A Pulse Electroplating Process.en_HK
dc.relation.isreferencedbyUS 2008132082 (A1) 2008-06-05en_HK
dc.relation.isreferencedbyUS 7736928 (B2) 2010-06-15en_HK
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dc.relation.isreferencedbyUS 2002111121 (A1) 2002-08-15en_HK
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dc.relation.isreferencedbySG 87208 (A1) 2002-03-19en_HK
dc.relation.isreferencedbyWO 0068149 (A1) 2000-11-16en_HK
dc.relation.isreferencedbyEP 1035229 (A1) 2000-09-13en_HK
dc.relation.isreferencedbyEP 1035229 (B1) 2006-09-13en_HK
dc.relation.isreferencedbyUS 6258239 (B1) 2001-07-10en_HK
dc.relation.isreferencedbyUS 6022468 (A) 2000-02-08en_HK
dc.relation.isreferencedbyGB 2236763 (A) 1991-04-17en_HK
dc.relation.isreferencedbyGB 2236763 (B) 1993-11-17en_HK
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License For Public Patent Documents-
dc.titlePulse Electroplating Processen_HK
dc.typePatenten_US
dc.identifier.emailFung, Ying Sing:ysfung@hkucc.hku.hken_US
dc.description.naturepublished_or_final_version-
dc.contributor.inventorSing, MWen_US
dc.contributor.inventorFung, YSen_US
patents.identifier.applicationUS 06/884706en_HK
patents.identifier.grantedUS 4789437en_HK
patents.description.assigneeUniv Hong Kong [Hk]en_HK
patents.description.countryUnited States of Americaen_HK
patents.date.granted1988-12-06en_HK
dc.relation.referencesUS 2895889 (A) 1959-07-21en_HK
dc.relation.referencesUS 3775267 (A) 1973-11-27en_HK
dc.relation.referencesDE 1922421 (A1) 1970-11-05en_HK
dc.relation.referencesDE 1922421 (B2) 1972-06-15en_HK
dc.relation.referencesDE 1922421 (C3) 1974-04-04en_HK
dc.relation.referencesSU 434140 (A1) 1974-06-30en_HK
patents.identifier.hkutechidChm-1986-00227-1en_US
patents.date.application1986-07-11en_HK
patents.date.priority1986-07-11 US 06/884706en_HK
patents.description.ccUSen_HK
patents.relation.familyUS 4789437 (A) 1988-12-06en_HK
patents.description.kindAen_HK
patents.typePatent_granteden_HK

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