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Article: Giant mesoscopic spin hall effect on the surface of topological insulator

TitleGiant mesoscopic spin hall effect on the surface of topological insulator
Authors
KeywordsBallistic transports
Klein paradox
Mesoscopics
Scanning tunneling microscopes
Spin Hall effect
Issue Date2011
PublisherAmerican Physical Society. The Journal's web site is located at http://prl.aps.org
Citation
Physical Review Letters, 2011, v. 106 n. 5 How to Cite?
AbstractWe study mesoscopic spin Hall effect on the surface of a topological insulator with a step-function potential by using the McMillan method commonly used in the study of superconductor junctions. In the ballistic transport regime, we predict a giant spin polarization induced by a transverse electric current with parameter suitable to the topological insulator thin film Bi 2Se 3. The spin polarization oscillates across the potential boundary with no confinement due to the Klein paradox, and should be observable in a spin resolved scanning tunneling microscope. © 2011 American Physical Society.
Persistent Identifierhttp://hdl.handle.net/10722/139611
ISSN
2014 Impact Factor: 7.512
2014 SCImago Journal Rankings: 4.402
ISI Accession Number ID
Funding AgencyGrant Number
HKSAR RGCHKU 701010
CRF HKU 707010
National Basic Research Program of China (973 Program)2011CBA00103
NSFC11074218
PCSIRTIRT0754
Funding Information:

We acknowledge financial support from HKSAR RGC Grants No. HKU 701010 and No. CRF HKU 707010. Y.Z. is supported by the National Basic Research Program of China (973 Program, No. 2011CBA00103), NSFC (No. 11074218), and PCSIRT (No. IRT0754).

References

 

DC FieldValueLanguage
dc.contributor.authorGao, JHen_HK
dc.contributor.authorYuan, Jen_HK
dc.contributor.authorChen, WQen_HK
dc.contributor.authorZhou, Yen_HK
dc.contributor.authorZhang, FCen_HK
dc.date.accessioned2011-09-23T05:52:38Z-
dc.date.available2011-09-23T05:52:38Z-
dc.date.issued2011en_HK
dc.identifier.citationPhysical Review Letters, 2011, v. 106 n. 5en_HK
dc.identifier.issn0031-9007en_HK
dc.identifier.urihttp://hdl.handle.net/10722/139611-
dc.description.abstractWe study mesoscopic spin Hall effect on the surface of a topological insulator with a step-function potential by using the McMillan method commonly used in the study of superconductor junctions. In the ballistic transport regime, we predict a giant spin polarization induced by a transverse electric current with parameter suitable to the topological insulator thin film Bi 2Se 3. The spin polarization oscillates across the potential boundary with no confinement due to the Klein paradox, and should be observable in a spin resolved scanning tunneling microscope. © 2011 American Physical Society.en_HK
dc.languageengen_US
dc.publisherAmerican Physical Society. The Journal's web site is located at http://prl.aps.orgen_HK
dc.relation.ispartofPhysical Review Lettersen_HK
dc.rightsPhysical Review Letters. Copyright © American Physical Society.en_US
dc.rightsCreative Commons: Attribution 3.0 Hong Kong License-
dc.subjectBallistic transports-
dc.subjectKlein paradox-
dc.subjectMesoscopics-
dc.subjectScanning tunneling microscopes-
dc.subjectSpin Hall effect-
dc.titleGiant mesoscopic spin hall effect on the surface of topological insulatoren_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0031-9007&volume=106&issue=5, article no. 057205&spage=&epage=&date=2011&atitle=Giant+mesoscopic+spin+hall+effect+on+the+surface+of+topological+insulator-
dc.identifier.emailGao, JH: jhgao@hku.hken_HK
dc.identifier.emailChen, WQ: wqchen@hku.hken_HK
dc.identifier.emailZhang, FC: fuchun@hkucc.hku.hken_HK
dc.identifier.authorityGao, JH=rp00698en_HK
dc.identifier.authorityChen, WQ=rp00673en_HK
dc.identifier.authorityZhang, FC=rp00840en_HK
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1103/PhysRevLett.106.057205en_HK
dc.identifier.pmid21405429-
dc.identifier.scopuseid_2-s2.0-79551635140en_HK
dc.identifier.hkuros193504en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-79551635140&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume106en_HK
dc.identifier.issue5en_HK
dc.identifier.isiWOS:000286879900017-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridGao, JH=14021339900en_HK
dc.identifier.scopusauthoridYuan, J=36988934700en_HK
dc.identifier.scopusauthoridChen, WQ=36077405600en_HK
dc.identifier.scopusauthoridZhou, Y=36988934100en_HK
dc.identifier.scopusauthoridZhang, FC=14012468800en_HK

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