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Article: Robust level-set-based inverse lithography

TitleRobust level-set-based inverse lithography
Authors
KeywordsDefocus
Finite difference scheme
Inverse lithography
Layout patterns
Level sets
Issue Date2011
PublisherOptical Society of America. The Journal's web site is located at http://www.opticsexpress.org
Citation
Optics Express, 2011, v. 19 n. 6, p. 5511-5521 How to Cite?
AbstractLevel-set based inverse lithography technology (ILT) treats photomask design for microlithography as an inverse mathematical problem, interpreted with a time-dependent model, and then solved as a partial differential equation with finite difference schemes. This paper focuses on developing level-set based ILT for partially coherent systems, and upon that an expectation-orient optimization framework weighting the cost function by random process condition variables. These include defocus and aberration to enhance robustness of layout patterns against process variations. Results demonstrating the benefits of defocus-aberration-aware level-set based ILT are presented. © 2011 Optical Society of America.
Persistent Identifierhttp://hdl.handle.net/10722/135098
ISSN
2015 Impact Factor: 3.148
2015 SCImago Journal Rankings: 2.186
ISI Accession Number ID
Funding AgencyGrant Number
Research Grants Council of the Hong Kong Special Administrative Region, ChinaHKU 7139/06E
7174/07E
7134/08E
UGC
Funding Information:

This work was supported in part by the Research Grants Council of the Hong Kong Special Administrative Region, China, under Projects HKU 7139/06E, 7174/07E and 7134/08E, and by the UGC Areas of Excellence project Theory, Modeling, and Simulation of Emerging Electronics.

References
Grants

 

DC FieldValueLanguage
dc.contributor.authorShen, Yen_HK
dc.contributor.authorJia, Nen_HK
dc.contributor.authorWong, Nen_HK
dc.contributor.authorLam, EYen_HK
dc.date.accessioned2011-07-27T01:28:19Z-
dc.date.available2011-07-27T01:28:19Z-
dc.date.issued2011en_HK
dc.identifier.citationOptics Express, 2011, v. 19 n. 6, p. 5511-5521en_HK
dc.identifier.issn1094-4087en_HK
dc.identifier.urihttp://hdl.handle.net/10722/135098-
dc.description.abstractLevel-set based inverse lithography technology (ILT) treats photomask design for microlithography as an inverse mathematical problem, interpreted with a time-dependent model, and then solved as a partial differential equation with finite difference schemes. This paper focuses on developing level-set based ILT for partially coherent systems, and upon that an expectation-orient optimization framework weighting the cost function by random process condition variables. These include defocus and aberration to enhance robustness of layout patterns against process variations. Results demonstrating the benefits of defocus-aberration-aware level-set based ILT are presented. © 2011 Optical Society of America.en_HK
dc.languageengen_US
dc.publisherOptical Society of America. The Journal's web site is located at http://www.opticsexpress.orgen_HK
dc.relation.ispartofOptics Expressen_HK
dc.rightsThis work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.-
dc.rightsOptics Express. Copyright © Optical Society of America.-
dc.rightsThis paper was published in [Optics Express] and is made available as an electronic reprint with the permission of OSA. The paper can be found at the following URL on the OSA website: [http://www.opticsinfobase.org/abstract.cfm?URI=OE-19-6-5511]. Systematic or multiple reproduction or distribution to multiple locations via electronic or other means is prohibited and is subject to penalties under law.-
dc.subjectDefocus-
dc.subjectFinite difference scheme-
dc.subjectInverse lithography-
dc.subjectLayout patterns-
dc.subjectLevel sets-
dc.titleRobust level-set-based inverse lithographyen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=1094-4087&volume=19&issue=6&spage=5511&epage=5521&date=2011&atitle=Robust+level-set-based+inverse+lithography-
dc.identifier.emailWong, N:nwong@eee.hku.hken_HK
dc.identifier.emailLam, EY:elam@eee.hku.hken_HK
dc.identifier.authorityWong, N=rp00190en_HK
dc.identifier.authorityLam, EY=rp00131en_HK
dc.description.naturepublished_or_final_versionen_US
dc.identifier.doi10.1364/OE.19.005511en_HK
dc.identifier.pmid21445189-
dc.identifier.scopuseid_2-s2.0-79952591942en_HK
dc.identifier.hkuros186765en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-79952591942&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume19en_HK
dc.identifier.issue6en_HK
dc.identifier.spage5511en_HK
dc.identifier.epage5521en_HK
dc.identifier.isiWOS:000288871300089-
dc.publisher.placeUnited Statesen_HK
dc.relation.projectImaging system modeling and image synthesis for resolution enhancement in optical lithography-
dc.identifier.scopusauthoridShen, Y=12804295400en_HK
dc.identifier.scopusauthoridJia, N=34872289800en_HK
dc.identifier.scopusauthoridWong, N=35235551600en_HK
dc.identifier.scopusauthoridLam, EY=7102890004en_HK

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